BFP843H6327XTSA1

Overview

The BFP843H6327XTSA1 is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT) manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 2.25 V and a total power dissipation of 125 mW. The device features a transition frequency supporting high-frequency performance, achieving a minimum noise figure of 0.9 dB at 450 MHz and 1.2 dB at 5.5 GHz under specified bias conditions. Maximum power gain reaches 24.5 dB at 450 MHz and 17 dB at 5.5 GHz. It provides an output third-order intercept point (OIP3) of 24 dBm at 450 MHz and 19.5 dBm at 5.5 GHz. The component is housed in a SOT343 package.

Feature Summary

• Combines high end RF performance with robustness, including 20 dBm maximum RF input power handling and 1.5 kV HBM ESD hardness.
• Delivers best-in-class noise performance at high frequencies due to high transition frequency characteristics.
• Suitable for low voltage applications operating at 1.2 V and 1.8 V, with provisions for higher voltages using external resistors.

Applications

• WLAN, WiMAX and UWB systems
• Satellite radio (SDARs, DAB) and navigation systems (GPS, GLONASS, BeiDou, Galileo)
• Satellite communication systems

Procurement Notes

Verify the specific ordering code BFP843H6327XTSA1 against official Infineon documentation to ensure correct package type and reel configuration. Confirm that the device meets industrial application qualification standards as defined by JEDEC47/20/22. Check for any updates regarding product lifecycle status or availability changes directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component for designs requiring low noise amplification in the sub-10 GHz range with strict low voltage constraints. Ensure the design accommodates the 2.25 V maximum collector-emitter voltage limit. Consider the integrated feedback capacitance when calculating stability and matching networks. Verify thermal management capabilities given the 125 mW total power dissipation rating in the SOT343 package.

Part Context

This part belongs to the BFP843 series of robust low noise broadband pre-matched RF bipolar transistors. It utilizes silicon-germanium heterojunction bipolar transistor technology. The H6327XTSA1 suffix indicates the specific tape and reel packaging format used for surface mount assembly. It is designed to replace older discrete solutions with integrated matching and enhanced ESD protection.

Replacement Considerations

Direct substitutes within the same family include BFP843F and BFP843. Verify pin compatibility and electrical parameter overlaps before substitution. Consult the official replacement list provided by Infineon for qualified alternatives if the primary part is discontinued or unavailable.

FAQ

What is the maximum RF input power the BFP843 can handle?

The BFP843 can handle a maximum RF input power of 20 dBm.

Is the BFP843 qualified for industrial applications?

Yes, the device is qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

What is the ESD hardness rating of the BFP843?

The device has an ESD stress pulse hardness of 1.5 kV HBM across all pins, according to JESD22-A114.