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Product Detailed Parameters
- Description：RF TRANS NPN 10V 8GHZ SOT-23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：10V
- Frequency - Transition：8GHz
- Noise Figure (dB Typ @ f)：1.3dB ~ 3dB @ 1GHz ~ 2GHz
- Gain：-
- Power - Max：300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 15mA, 5V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The BFQ67,215 is a silicon NPN RF small-signal bipolar transistor manufactured by NXP USA Inc. It is designed for high-frequency broadband low-noise amplifier applications in UHF, VHF, and millimeter-wave bands. The device utilizes an SOT-23 surface-mount package with plastic encapsulation. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 10V, a collector-base voltage (VCBO) of 20V, and a maximum collector current (IC) of 50mA. The component features a characteristic frequency (fT) of 8.0GHz at VCE=8V and IC=15mA. It offers a power gain (GUM) of 14dB and a noise figure (NF) of 1.3dB under the same test conditions at 1GHz. Total power dissipation is rated at 300mW.
Feature Summary
- Optimized for ultra-high frequency low-noise amplification
- Suitable for VHF, UHF, CATV, and wireless remote control modules
- Designed for high-frequency broadband RF signal processing
Applications
- High-frequency broadband low-noise amplifiers
- UHF and VHF receiver front-ends
- CATV systems
- Wireless remote control modules
- RF module signal conditioning
Procurement Notes
Verify the specific suffix
Selection Notes
Select this component when designing circuits requiring low noise figures below 1.5dB and high gain at frequencies up to several gigahertz. Ensure the design accommodates the 10V collector-emitter voltage limit and 300mW thermal dissipation constraints typical of the SOT-23 package. Confirm that the required operating frequency aligns with the 8GHz transition frequency specification for optimal performance.
Part Context
The BFQ67 belongs to a family of silicon NPN RF transistors originally developed by Philips Semiconductors, now part of NXP. These devices are engineered for general-purpose high-frequency applications where low noise and high linearity are critical. The BFQ67,215 variant specifically denotes the tape-and-reel packaging configuration for automated surface-mount assembly processes.
Replacement Considerations
Publicly confirmed substitute part numbers for the BFQ67,215 were not identified in the provided documentation. Designers should consult official NXP cross-reference tools or manufacturer datasheets for verified equivalent components.
