BFQ67W,115

$0.30

Description：RF TRANS NPN 10V 8GHZ SC-70
Series：-

SKU:9520cb44bbfb Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 10V 8GHZ SC-70
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：10V
Frequency - Transition：8GHz
Noise Figure (dB Typ @ f)：1.3dB ~ 3dB @ 1GHz ~ 2GHz
Gain：-
Power - Max：300mW
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 15mA, 5V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70
Grade：-
Qualification：-

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BFQ67W,115

Overview

The BFQ67W,115 is a silicon NPN bipolar RF transistor manufactured by NXP Semiconductors. It operates with a maximum collector-emitter breakdown voltage of 10V and a maximum collector current of 50mA. The device supports frequencies up to 8GHz and dissipates 300mW of power. It is housed in an SC-70 (SOT323) surface-mount package. The component is designed for wideband applications and features a junction temperature range of 175°C.

Feature Summary

NPN silicon construction optimized for high-frequency wideband performance
Surface-mount packaging suitable for compact mobile device designs
High junction temperature rating for thermal stability

Applications

Satellite TV tuners
RF portable communications equipment
Wideband amplifier circuits

Procurement Notes

Verify the specific ordering code BFQ67W,115 against official NXP documentation to confirm pinout and electrical specifications. Note that this component may be listed as discontinued or no longer manufactured in certain regions; check current production status before finalizing design-in decisions.

Selection Notes

Select this component for wideband RF applications requiring low voltage operation and small form factor. Ensure the design accommodates the 10V breakdown limit and 50mA current constraints. Verify compatibility with SOT323 footprint requirements during PCB layout.

Part Context

This part belongs to NXP's portfolio of silicon NPN transistors designed for mobile devices. It is specifically engineered for wideband applications, distinguishing it from general-purpose switching transistors through its optimized frequency response and noise characteristics for RF signal processing.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Due to potential discontinuation status, consult NXP directly for recommended alternatives or obsolescence management strategies.