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The BFQ790H6327XTSA1 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It operates at a maximum collector-emitter voltage of 6.1V and supports a continuous collector current of 300mA. The device features a transition frequency of 1.85GHz and a maximum power dissipation of 1.5W. It is housed in a surface-mount PG-SOT89 (TO-243AA) package. This component is designated as obsolete with no further production planned.
This component is officially classified as obsolete by the manufacturer. No new units are being produced, and end-of-life status is confirmed. Procurement must rely on existing distributor stock or secondary market sources. Verify authenticity and condition carefully when sourcing from non-authorized channels due to discontinued status.
Designers should consider this part only for maintenance of existing equipment requiring legacy components. New designs must avoid this obsolete part number. Evaluate alternative active RF transistors from current Infineon portfolios that meet similar electrical requirements for transition frequency and power handling capabilities.
The BFQ790 series represents Infineon's historical portfolio of silicon RF bipolar transistors designed for communication systems. The H6327 suffix indicates specific binning or tape-and-reel configuration details. This specific model belongs to a discontinued product line, reflecting older generation RF technology standards compared to modern GaAs or SiGe alternatives.
No public confirmed substitute part numbers are available for this obsolete component. Engineers must identify functional equivalents based on pinout compatibility and electrical parameter matching from other manufacturers or newer Infineon families.