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The BFR 181W is a low noise silicon bipolar RF transistor designed for broadband amplifiers operating at collector currents between 0.5 mA and 12 mA. It features an fT of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. The device supports a maximum collector-emitter voltage (VCEO) of 12 V, a collector current (IC) of 20 mA, and total power dissipation (Ptot) of 175 mW. It operates within a junction temperature range of -65 °C to 150 °C and utilizes the SOT323 package.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance and AEC-Q101 qualification status prior to integration. Ensure proper ESD handling precautions are observed during storage and assembly due to device sensitivity.
Select this component for designs requiring low noise performance at 900 MHz and 1.8 GHz frequencies. Evaluate thermal constraints against the 175 mW power dissipation limit and 345 K/W thermal resistance. Ensure biasing conditions align with the specified collector current range of 0.5 mA to 12 mA for optimal noise and gain figures.
The BFR 181W belongs to Infineon's portfolio of silicon bipolar RF transistors. It shares design similarities with other low-noise variants like the BFR181 but utilizes the SOT323 surface-mount package. This specific part number denotes the standard tape-and-reel configuration for automated assembly processes.
Direct substitutes include BFR181E6327HTSA1 and BFR181E6327INTR. Verify pin compatibility and electrical parameters before substitution.