BFR 181W E6327

BFR 181W E6327

$0.26
  • Description:RF TRANS NPN 12V 8GHZ PG-SOT-323
  • Series:-

SKU:c5888a69f25f Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 8GHZ PG-SOT-323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:8GHz
  • Noise Figure (dB Typ @ f):0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
  • Gain:19dB
  • Power - Max:175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 8V
  • Current - Collector (Ic) (Max):20mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

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BFR 181W E6327

Overview

The BFR 181W is a low noise silicon bipolar RF transistor designed for broadband amplifiers operating at collector currents between 0.5 mA and 12 mA. It features an fT of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. The device supports a maximum collector-emitter voltage (VCEO) of 12 V, a collector current (IC) of 20 mA, and total power dissipation (Ptot) of 175 mW. It operates within a junction temperature range of -65 °C to 150 °C and utilizes the SOT323 package.

Feature Summary

  • Optimized for low noise and high-gain applications in broadband amplifier circuits
  • Provides transition frequency (fT) of 8 GHz with minimum noise figure of 0.9 dB at 900 MHz
  • Compatible with Pb-free (RoHS compliant) and halogen-free industry standard packaging

Applications

  • Low noise broadband amplifiers
  • RF signal processing stages requiring high gain and low noise characteristics

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance and AEC-Q101 qualification status prior to integration. Ensure proper ESD handling precautions are observed during storage and assembly due to device sensitivity.

Selection Notes

Select this component for designs requiring low noise performance at 900 MHz and 1.8 GHz frequencies. Evaluate thermal constraints against the 175 mW power dissipation limit and 345 K/W thermal resistance. Ensure biasing conditions align with the specified collector current range of 0.5 mA to 12 mA for optimal noise and gain figures.

Part Context

The BFR 181W belongs to Infineon's portfolio of silicon bipolar RF transistors. It shares design similarities with other low-noise variants like the BFR181 but utilizes the SOT323 surface-mount package. This specific part number denotes the standard tape-and-reel configuration for automated assembly processes.

Replacement Considerations

Direct substitutes include BFR181E6327HTSA1 and BFR181E6327INTR. Verify pin compatibility and electrical parameters before substitution.

BFR 181W E6327BFR 181W E6327
$0.26
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