SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BFR 182W is an NPN silicon RF bipolar transistor designed for low noise and high-gain broadband amplifier applications. It operates with collector currents ranging from 1 mA to 20 mA. Key electrical parameters include a transition frequency (fT) of 8 GHz at 15 mA, a minimum noise figure of 0.9 dB at 900 MHz, and a maximum stable power gain of 19 dB at 900 MHz. The device features a collector-emitter breakdown voltage of 12 V, a continuous collector current limit of 35 mA, and a total power dissipation of 250 mW. It is housed in a SOT-323 surface-mount package.
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets AEC-Q101 qualification requirements if automotive standards are necessary for the design. Check for any recent product change notifications regarding lead content or material composition updates.
Select this component when designing circuits requiring a minimum noise figure of 0.9 dB at 900 MHz. Ensure the operating collector current remains between 1 mA and 20 mA to maintain optimal performance characteristics. Verify that the SOT-323 package dimensions fit the available PCB real estate and thermal management constraints.
This part belongs to the BFR182 series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. It is specifically engineered for RF applications where minimal signal degradation and high amplification are critical. The device utilizes standard silicon technology packaged in a compact SOT-323 form factor suitable for modern surface-mount assembly processes.
No public confirmed substitute part numbers are documented.