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Product Detailed Parameters
- Description：RF TRANS NPN 12V 8GHZ PG-SOT-323
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：8GHz
- Noise Figure (dB Typ @ f)：1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain：10.5dB ~ 16dB
- Power - Max：580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 30mA, 8V
- Current - Collector (Ic) (Max)：80mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：PG-SOT323
- Grade：-
- Qualification：-
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Overview
The BFR 193W E6327 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It features an 8 GHz transition frequency and a minimum noise figure of 1 dB at 900 MHz. The device operates with a collector-emitter voltage of 12 V, a maximum collector current of 80 mA, and a total power dissipation of 580 mW. It utilizes an SOT-323 package and provides a DC current gain (hFE) of 70 to 140. This component is designed for high-gain amplifiers up to 2 GHz.
Feature Summary
- Optimized for low noise and high-gain amplifier applications operating up to 2 GHz
- Provides linear broadband amplification capabilities
- Features a transition frequency of 8 GHz and a minimum noise figure of 1 dB at 900 MHz
Applications
- Low noise, high-gain amplifiers up to 2 GHz
- Linear broadband amplifiers
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Confirm RoHS compliance status and AEC-Q101 qualification availability directly from the manufacturer before procurement. Ensure handling precautions are followed due to electrostatic discharge sensitivity.
Selection Notes
Select this component when designing circuits requiring low noise figures around 1 dB at 900 MHz. Consider the 12 V collector-emitter voltage limit and 80 mA maximum collector current for biasing requirements. Verify that the SOT-323 package dimensions fit the target PCB layout constraints.
Part Context
This part belongs to the BFR193 series of low noise silicon bipolar RF transistors. It is specifically engineered for radio frequency applications where signal integrity and minimal noise addition are critical performance factors.
Replacement Considerations
Consult the official datasheet for direct pin-compatible alternatives within the same series. Verify electrical parameters such as transition frequency and noise figure match the original design requirements before substitution.
FAQ
What is the minimum noise figure specification?
The minimum noise figure is 1 dB at 900 MHz and 1.6 dB at 1.8 GHz.
What is the transition frequency of the BFR 193W?
The transition frequency is 8 GHz under standard test conditions.
Is this component qualified for automotive applications?
A qualification report according to AEC-Q101 is available for this component.
