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The BFR 92W E6327 is an NPN silicon RF bipolar junction transistor manufactured by Infineon Technologies. It operates at a transition frequency of 5 GHz with a maximum collector-emitter voltage (VCEO) of 15 V and a continuous collector current of 45 mA. The device dissipates up to 280 mW of power and features a DC current gain (hFE) of at least 70 at 15 mA and 8 V. Packaged in the PG-SOT-323 surface-mount format, it exhibits a noise figure between 1.4 dB and 2.0 dB at frequencies from 900 MHz to 1.8 GHz.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific suffix matches the required package and tape-and-reel specifications. Check for obsolescence status as availability may be limited. Ensure compliance with RoHS directives and automotive qualification standards if applicable to the design requirements.
Select this component when a 15 V breakdown voltage and 45 mA current limit are sufficient for the circuit design. Consider the 280 mW power dissipation capability for thermal management planning. Evaluate the noise figure specifications against system sensitivity requirements. Compare the PG-SOT-323 footprint against available board space constraints.
This part belongs to the BFR92 series of RF transistors, which are designed for general-purpose radio frequency applications. The E6327 suffix typically denotes specific packaging and handling configurations used by Infineon for mass production and distribution. It serves as a discrete solution for RF front-end modules where integrated circuits may not provide the necessary flexibility or performance characteristics.
Consult official Infineon documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before substitution. Cross-reference datasheets to ensure the alternative device meets the 5 GHz transition frequency and 15 V voltage rating requirements.