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The BFR93AW E6327 is an NPN silicon RF bipolar junction transistor manufactured by Infineon Technologies. It operates within the BFR93 series and is housed in a PG-SOT23 (SOT-23-3) surface-mount package. The device features a maximum collector-emitter breakdown voltage of 12V and a continuous collector current rating of 80mA. Its transition frequency reaches 6GHz, with a power dissipation capacity of 300mW. DC current gain is specified at a minimum of 70 under standard test conditions.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific automotive grade certifications required for integration into safety-critical systems. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage during assembly.
Select this component when designing circuits requiring high-frequency NPN amplification with automotive reliability standards. Compare transition frequency and noise figure specifications against alternative RF transistors to ensure compatibility with target operating bands. Verify that the SOT-23 package dimensions align with existing PCB footprint constraints.
This part belongs to the BFR93 family of RF bipolar transistors from Infineon Technologies. The 'E6327' suffix typically denotes specific tape-and-reel packaging configurations used for automated surface-mount assembly processes. It represents a specialized variant optimized for volume manufacturing within the automotive and industrial sectors.
Consult official Infineon documentation for verified cross-reference parts. Direct replacements must match the SOT-23 package, 12V Vceo rating, and 6GHz fT specification. Automotive applications require equivalent AEC-Q100 qualification.