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The BFR181W is a low noise silicon bipolar RF transistor designed for broadband amplifiers operating at collector currents between 0.5 mA and 12 mA. It features an fT of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. Key electrical parameters include a collector-emitter breakdown voltage (VCEO) of 12 V, a maximum collector current (IC) of 20 mA, and a total power dissipation (Ptot) of 175 mW at a case temperature of 90 °C. The device utilizes the SOT323 package with visible leads.
Verify component authenticity by checking the marking code 'RFs' against the datasheet specifications. Confirm the package type matches the SOT323 outline dimensions. Ensure handling precautions are followed due to ESD sensitivity. Validate RoHS compliance status through official Infineon documentation before integration into production.
Select this component when designing circuits requiring high gain and low noise figures around 900 MHz to 1.8 GHz. Ensure the design accommodates the 12 V collector-emitter voltage limit and 175 mW power dissipation constraints. Verify that the required collector current falls within the 0.5 mA to 12 mA operational range for optimal performance characteristics.
This part belongs to the BFR181 series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. It is specifically engineered for RF applications where signal integrity and low noise are critical. The device is available in a surface-mount SOT323 package suitable for automated assembly processes.
No direct public substitute part numbers are confirmed in the provided documentation. Cross-referencing requires matching fT, NFmin, and package specifications with alternative manufacturers.