BFR193E6327HTSA1

Overview

The BFR193E6327HTSA1 is an NPN silicon RF bipolar transistor in a SOT-23 package. It features a collector-emitter voltage (VCEO) of 12 V, continuous collector current of 80 mA, and total power dissipation of 580 mW at 25 °C. The transition frequency (fT) reaches 8 GHz at IC = 50 mA, VCE = 8 V. At 900 MHz, the minimum noise figure is 1 dB with maximum available power gain of 15 dB. DC current gain (hFE) ranges from 70 to 140. Operating temperature spans -55 °C to +150 °C.

Feature Summary

• Designed for low-noise, high-gain amplifier applications up to 2 GHz
• Suitable for linear broadband amplifiers
• Pb-free RoHS compliant packaging

Applications

• Low noise, high-gain amplifiers up to 2 GHz
• Linear broadband amplifiers

Procurement Notes

Verify component authenticity by checking the datasheet revision date and manufacturer markings against official Infineon documentation. Confirm that the ordering suffix matches the specific tape-and-reel configuration required for automated assembly processes. Ensure compliance with AEC-Q101 qualification standards if automotive integration is planned.

Selection Notes

Select this component when a low noise figure near 1 dB is critical at 900 MHz alongside high transition frequency requirements. Evaluate thermal constraints carefully, as total power dissipation decreases significantly as case temperature rises above ambient levels. Verify biasing conditions align with the specified 8 V collector-emitter voltage for optimal AC performance metrics.

Part Context

This part belongs to the BFR193 series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. It utilizes standard SOT-23 surface mount technology for compact circuit board integration. The device is specifically engineered for radio frequency signal processing tasks requiring minimal signal degradation.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the source material.