BFR193FH6327XTSA1

$0.19

Description：RF TRANS NPN 12V 8GHZ PG-TSFP-3
Series：-

SKU:0120822b4147 Category: Bipolar RF Transistors Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 8GHZ PG-TSFP-3
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：8GHz
Noise Figure (dB Typ @ f)：1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain：12.5dB
Power - Max：580mW
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 30mA, 8V
Current - Collector (Ic) (Max)：80mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-723
Supplier Device Package：PG-TSFP-3
Grade：-
Qualification：-

Download product information

BFR193FH6327XTSA1

Overview

The BFR193FH6327XTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It features an fT of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. The device operates with a maximum collector-emitter voltage (VCEO) of 12 V and supports a continuous collector current (IC) of 80 mA. Total power dissipation reaches 580 mW, with a junction temperature limit of 150 °C. DC current gain (hFE) ranges from 70 to 140 at IC = 30 mA and VCE = 8 V. The component utilizes the TSFP-3 surface-mount package.

Feature Summary

Designed for low noise and high-gain amplifier applications up to 2 GHz
Suitable for linear broadband amplification tasks
Compliant with RoHS standards and halogen-free manufacturing

Applications

Low noise, high-gain amplifiers operating up to 2 GHz
Linear broadband amplifiers

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Confirm AEC-Q101 qualification status if automotive compliance is required. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Cross-reference thermal resistance values with application notes for accurate heat sinking calculations.

Selection Notes

Select this component when a silicon NPN transistor with an 8 GHz transition frequency is required. The device provides a typical noise figure of 1 dB at 900 MHz, making it appropriate for sensitive front-end stages. Verify that the 12 V collector-emitter voltage rating aligns with the circuit's supply requirements and signal swing limits.

Part Context

This part belongs to the BFR193 series of low noise silicon bipolar RF transistors produced by Infineon Technologies. The 'F' designation indicates the TSFP-3 surface-mount package variant. The 'H6327XTSA1' suffix denotes specific packaging and tape-and-reel configurations used for automated assembly processes.