BFR380TE6327

BFR380TE6327

$0.08
  • Description:RF TRANS NPN 9V 14GHZ PG-SC-75
  • Series:-

SKU:ca7bc3cc35ba Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 9V 14GHZ PG-SC-75
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):9V
  • Frequency - Transition:14GHz
  • Noise Figure (dB Typ @ f):1.1dB @ 1.8GHz
  • Gain:12.5dB
  • Power - Max:380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 40mA, 3V
  • Current - Collector (Ic) (Max):80mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:PG-SC-75
  • Grade:-
  • Qualification:-

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BFR380TE6327

Overview

The BFR380TE6327 is an NPN silicon RF bipolar transistor from Infineon Technologies, designed for high-frequency applications up to 14 GHz. It features a maximum collector-emitter voltage of 6 V and a continuous collector current of 80 mA. The device offers a minimum DC current gain (hFE) of 90 and supports a power dissipation of 380 mW. Operating within a temperature range of -55°C to +150°C, it utilizes the TSLP-3 surface-mount package.

Feature Summary

  • Optimized for radio frequency signal amplification in high-frequency circuits
  • High current gain ensures efficient signal processing with minimal loss
  • Robust thermal performance allows stable operation across wide temperature extremes

Applications

  • RF amplifier stages in communication systems
  • Signal processing modules requiring high-frequency gain
  • Wireless transmission equipment components

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notices, as availability may be limited. Ensure storage conditions meet specified temperature requirements to maintain device integrity prior to installation.

Selection Notes

Select this component when designing circuits requiring NPN RF transistors with 14 GHz operational limits. Consider the 6 V voltage rating and 80 mA current capacity against load requirements. Evaluate the TSLP-3 package dimensions for PCB layout compatibility and assess thermal management needs given the 380 mW dissipation limit.

Part Context

This part belongs to Infineon's BFR series of silicon RF bipolar transistors. It shares design principles with other high-frequency devices in the lineup but is distinct due to its specific 14 GHz frequency cutoff and 6 V voltage characteristics tailored for compact RF applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence carefully if considering alternatives, ensuring matching frequency, voltage, and package specifications.

BFR380TE6327BFR380TE6327
$0.08
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