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The BFR380TE6327 is an NPN silicon RF bipolar transistor from Infineon Technologies, designed for high-frequency applications up to 14 GHz. It features a maximum collector-emitter voltage of 6 V and a continuous collector current of 80 mA. The device offers a minimum DC current gain (hFE) of 90 and supports a power dissipation of 380 mW. Operating within a temperature range of -55°C to +150°C, it utilizes the TSLP-3 surface-mount package.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notices, as availability may be limited. Ensure storage conditions meet specified temperature requirements to maintain device integrity prior to installation.
Select this component when designing circuits requiring NPN RF transistors with 14 GHz operational limits. Consider the 6 V voltage rating and 80 mA current capacity against load requirements. Evaluate the TSLP-3 package dimensions for PCB layout compatibility and assess thermal management needs given the 380 mW dissipation limit.
This part belongs to Infineon's BFR series of silicon RF bipolar transistors. It shares design principles with other high-frequency devices in the lineup but is distinct due to its specific 14 GHz frequency cutoff and 6 V voltage characteristics tailored for compact RF applications.
Public confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence carefully if considering alternatives, ensuring matching frequency, voltage, and package specifications.