BFR505T,115

Overview

The BFR505T,115 is an NPN wideband transistor in a plastic SOT416 (SC-75) package. It features a transition frequency of 9 GHz and a maximum unilateral power gain of 17 dB at 900 MHz. The device supports a collector-emitter voltage of 15 V and a DC collector current of 18 mA with a total power dissipation of 150 mW. Its minimum noise figure ranges from 1.2 to 1.7 dB at 900 MHz. Gold metallization ensures high reliability for RF applications.

Feature Summary

• Gold metallization for excellent reliability
• Low current consumption and low noise figure
• High power gain and high transition frequency

Applications

• Low power amplifiers in portable communication equipment
• Oscillators in cellular phones, cordless phones, and pagers
• Mixers in RF front ends up to 2 GHz

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for low-power RF designs requiring high transition frequencies. Ensure the operating conditions remain within the absolute maximum ratings, particularly the 150 mW power dissipation limit. Verify thermal resistance requirements for the target application environment.

Part Context

This part belongs to the NXP discrete semiconductor portfolio. It is designed as a wideband transistor for UHF and VHF bands. The SOT416 package provides a compact surface-mount solution suitable for space-constrained mobile devices.

Replacement Considerations

Check for direct equivalents such as the BFS505 or BFR505 variants. Confirm pinout compatibility and electrical parameter overlap before substitution.