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Product Detailed Parameters
- Description：RF TRANS NPN 15V 9GHZ SOT-23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：9GHz
- Noise Figure (dB Typ @ f)：1.1dB ~ 2.1dB @ 900MHz
- Gain：-
- Power - Max：300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 20mA, 6V
- Current - Collector (Ic) (Max)：70mA
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The BFR520 is an NPN silicon planar epitaxial transistor housed in a SOT23 plastic package. It features a transition frequency of 9 GHz, collector-base voltage of 20 V, and DC current gain ranging from 60 to 250 at 20 mA. Maximum unilateral power gain reaches 15 dB at 900 MHz and 9 dB at 2 GHz. Noise figure varies between 1.1 dB and 2.1 dB depending on bias conditions. The device supports a maximum collector current of 70 mA and total power dissipation up to 300 mW.
Feature Summary
- Gold metallization ensures excellent reliability
- High power gain for RF applications
- Low noise figure performance
- High transition frequency operation
Applications
- RF front end wideband applications in the GHz range
- Analog and digital cellular telephones
- Cordless telephones (CT1, CT2, DECT)
- Radar detectors
- Repeater amplifiers in fiber-optic systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details. Confirm that the component meets all required electrical specifications for the intended design application before finalizing procurement decisions.
Selection Notes
Evaluate the device based on its 9 GHz transition frequency and low noise characteristics for high-frequency designs. Ensure the operating conditions remain within the specified limiting values for collector-emitter voltage and power dissipation to maintain reliability.
Part Context
This component is an NPN silicon planar epitaxial transistor designed for wideband RF applications. It utilizes gold metallization for enhanced reliability and is packaged in a standard SOT23 surface-mount configuration suitable for compact electronic designs.
Replacement Considerations
Consult the manufacturer's official documentation for verified substitute part numbers. Do not assume functional equivalence with other transistors without confirming pinout compatibility and electrical parameter alignment.
FAQ
What is the maximum transition frequency of the BFR520?
The maximum transition frequency is 9 GHz.
What is the collector-base voltage rating?
The collector-base voltage rating is 20 V.
What is the typical DC current gain at 20 mA?
The typical DC current gain is 120, with a range of 60 to 250.
