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The BFR720L3RHE6327XTSA1 is an NPN silicon-germanium RF bipolar transistor manufactured by Infineon Technologies. It operates at a maximum frequency of 45 GHz with a collector-emitter voltage (Vceo) of 4.7 V and a continuous collector current of 20 mA. The device utilizes TSLP-3 surface-mount packaging and features a minimum DC current gain (hFE) of 160. This component is designed for high-frequency applications requiring low noise and high linearity in compact form factors.
Verify the specific operating parameters against your circuit requirements, particularly the 4.7 V collector-emitter voltage limit and 20 mA current rating. Confirm that the TSLP-3 package dimensions align with your PCB layout constraints. Ensure compatibility with your intended RF frequency range up to 45 GHz. Check for any obsolescence notices or end-of-life status from the manufacturer before finalizing procurement plans.
Select this component when designing circuits requiring high-frequency operation near 45 GHz with strict size limitations. Consider its silicon-germanium construction for superior noise figures compared to standard silicon devices. Evaluate the 4.7 V voltage rating to ensure it meets the power supply constraints of your application. The TSLP-3 package offers a balance between thermal performance and board space efficiency for dense layouts.
This part belongs to the BFR720L3 series of RF transistors from Infineon Technologies. It is specifically engineered for wireless infrastructure and consumer electronics requiring miniaturized RF solutions. The series emphasizes high gain and low noise characteristics suitable for modern communication standards.
Public confirmed substitute part numbers are not available in the provided documentation.