BFR720L3RHE6327XTSA1

BFR720L3RHE6327XTSA1

$0.31
  • Description:RF TRANS NPN 4.7V 45GHZ TSLP-3
  • Series:-

SKU:9c501cd42f3d Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 4.7V 45GHZ TSLP-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):4.7V
  • Frequency - Transition:45GHz
  • Noise Figure (dB Typ @ f):0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
  • Gain:24dB
  • Power - Max:80mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 13mA, 3V
  • Current - Collector (Ic) (Max):20mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:PG-TSLP-3
  • Grade:-
  • Qualification:-

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BFR720L3RHE6327XTSA1

Overview

The BFR720L3RHE6327XTSA1 is an NPN silicon-germanium RF bipolar transistor manufactured by Infineon Technologies. It operates at a maximum frequency of 45 GHz with a collector-emitter voltage (Vceo) of 4.7 V and a continuous collector current of 20 mA. The device utilizes TSLP-3 surface-mount packaging and features a minimum DC current gain (hFE) of 160. This component is designed for high-frequency applications requiring low noise and high linearity in compact form factors.

Feature Summary

  • Utilizes silicon-germanium technology for enhanced high-frequency performance
  • Optimized for low-noise amplification in RF signal chains
  • Compact TSLP-3 surface-mount package design

Applications

  • RF front-end modules
  • Low-noise amplifier stages
  • Wireless communication systems

Procurement Notes

Verify the specific operating parameters against your circuit requirements, particularly the 4.7 V collector-emitter voltage limit and 20 mA current rating. Confirm that the TSLP-3 package dimensions align with your PCB layout constraints. Ensure compatibility with your intended RF frequency range up to 45 GHz. Check for any obsolescence notices or end-of-life status from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring high-frequency operation near 45 GHz with strict size limitations. Consider its silicon-germanium construction for superior noise figures compared to standard silicon devices. Evaluate the 4.7 V voltage rating to ensure it meets the power supply constraints of your application. The TSLP-3 package offers a balance between thermal performance and board space efficiency for dense layouts.

Part Context

This part belongs to the BFR720L3 series of RF transistors from Infineon Technologies. It is specifically engineered for wireless infrastructure and consumer electronics requiring miniaturized RF solutions. The series emphasizes high gain and low noise characteristics suitable for modern communication standards.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

BFR720L3RHE6327XTSA1BFR720L3RHE6327XTSA1
$0.31
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