BFR740EL3E6829XTSA1

Overview

The BFR740EL3E6829XTSA1 is an NPN silicon germanium (SiGe) RF transistor manufactured by Infineon Technologies. It is designed for high-frequency applications, featuring a transition frequency of 44 GHz and a maximum DC collector current of 45 mA. The device operates with a minimum noise figure of 0.45 dB at 900 MHz and provides a maximum gain of 27 dB at the same frequency. Key electrical limits include a maximum collector-emitter voltage of 4 V and a total power dissipation of 160 mW. It is housed in an SOT-343 surface-mount package.

Feature Summary

• Utilizes silicon germanium technology to achieve high-speed performance suitable for RF front-end circuits.
• Provides low-noise characteristics optimized for sensitive signal reception at 900 MHz frequencies.
• Features a compact SOT-343 surface-mount package designed for space-constrained PCB layouts.

Applications

• Low-noise amplifier stages in wireless local area network (WLAN) front ends operating between 6 and 7 GHz.
• Signal amplification in global navigation satellite system (GNSS) receiver chains.
• General-purpose radio frequency amplification in mobile communication devices.

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix matches the required tape-and-reel packaging configuration. Ensure compliance with RoHS directives and check for any end-of-life notices regarding production availability before finalizing procurement plans.

Selection Notes

Select this component when a SiGe NPN transistor with a 44 GHz transition frequency is required. Ensure the design accommodates the 4 V maximum collector-emitter voltage rating. Verify that the SOT-343 package dimensions fit the target board layout and that thermal management supports the 160 mW power dissipation limit under operating conditions.

Part Context

This part belongs to the BFP740 family of RF transistors from Infineon Technologies. The family is characterized by silicon germanium construction and is widely used in wireless infrastructure and consumer electronics requiring high-frequency signal processing. The specific model variant denotes particular manufacturing and packaging specifications within this product line.

Replacement Considerations

Direct substitutes may include other BFP740 variants with compatible pinouts and electrical ratings. Verify that alternative components match the 44 GHz fT specification and SOT-343 footprint. Cross-reference datasheets to ensure equivalent noise figures and gain characteristics for the intended application frequency.