BFR840L3RHESDE6327XTSA1

Overview

The BFR840L3RHESD is a SiGe:C NPN RF heterojunction bipolar transistor (HBT) with integrated ESD protection, designed for 5 GHz band applications. It features a transition frequency (fT) of 75 GHz and supports low voltage operation at VCC = 1.2 V and 1.8 V. Key electrical parameters include a minimum noise figure (NFmin) of 0.65 dB at 5.5 GHz and 1.1 dB at 12 GHz (VCE=1.8 V, IC=5 mA). Maximum power gain (Gms) reaches 22 dB at 5.5 GHz (VCE=1.8 V, IC=10 mA), with an output third-order intercept point (OIP3) of 18 dBm under the same conditions. The device handles up to 20 dBm RF input power and offers 1.5 kV HBM ESD hardness.

Feature Summary

• Combines high end RF performance with robustness, including 20 dBm maximum RF input power capability.
• Features integrated ESD protection providing 1.5 kV HBM hardness across all pins.
• Optimized for low voltage applications operating at 1.2 V and 1.8 V supply levels.

Applications

• Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, WiMAX, and UWB
• Satellite communication systems: satellite radio (SDARs, DAB) and navigation systems (GPS, GLONASS, BeiDou, Galileo)

Procurement Notes

Verify the complete ordering code BFR840L3RHESDE6327XTSA1 against official Infineon documentation to ensure correct package variant and reel quantity specifications. Confirm that handling procedures strictly adhere to ESD sensitivity warnings specified in the datasheet. Validate that the industrial qualification meets JEDEC standards required for the target application environment before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring low noise figures at frequencies up to 12 GHz with limited supply voltage headroom. Ensure biasing networks support the specified collector current ranges (typically 5 mA to 25 mA) to achieve optimal fT and linearity metrics. Verify thermal management capabilities given the 75 mW total power dissipation limit in the TSLP-3-9 package.

Part Context

This part belongs to the BFR840L3RHESD family of SiGe:C NPN RF bipolar transistors manufactured by Infineon Technologies. It utilizes the TSLP-3-9 leadless package configuration. The specific suffix E6327XTSA1 denotes the tape and reel packaging format containing 15,000 pieces per reel, intended for automated surface-mount assembly processes.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet. Designers should consult Infineon directly for qualified alternatives or verify pin-compatible replacements through independent technical validation.