BFR92AW,115

$0.35

Description：RF TRANS NPN 15V 5GHZ SC-70
Series：-

SKU:83ec8f58817a Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 15V 5GHZ SC-70
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：15V
Frequency - Transition：5GHz
Noise Figure (dB Typ @ f)：2dB ~ 3dB @ 1GHz ~ 2GHz
Gain：-
Power - Max：300mW
DC Current Gain (hFE) (Min) @ Ic, Vce：65 @ 15mA, 10V
Current - Collector (Ic) (Max)：25mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70
Grade：-
Qualification：-

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BFR92AW,115

Overview

The BFR92AW,115 is a silicon NPN RF transistor manufactured by NXP USA Inc., housed in an SC-70 (SOT-323) surface-mount package. It features a maximum collector-emitter voltage of 15 V and a continuous collector current limit of 25 mA. The device supports a transition frequency up to 5 GHz and dissipates 300 mW of power at a soldering point temperature of 93 °C. DC current gain ranges from 65 to 135 at 15 mA and 10 V. Noise figures are typically 2 dB at 1 GHz and 3 dB at 2 GHz under optimized source impedance conditions.

Feature Summary

Gold metallization structure for enhanced reliability
High unilateral power gain characteristics
Compatible with standard SOT-323 footprint

Applications

RF amplifiers operating up to 1 GHz
Mixer circuits
Oscillators

Procurement Notes

Verify component authenticity through authorized channels as the part is discontinued. Confirm RoHS compliance status and check for available replacement options from NXP or alternative manufacturers. Ensure storage conditions remain within specified limits to maintain junction integrity before installation.

Selection Notes

Evaluate thermal resistance requirements against the 190 K/W junction-to-soldering-point rating. Verify that the application bias points align with the specified 15 mA collector current for optimal gain and noise performance. Consider the 150 °C maximum junction temperature limit during high-power operation scenarios.

Part Context

This component belongs to the BFR92 family of wideband transistors. It shares identical crystal structures with the SOT-23 packaged BFR92A variant. The device is designed specifically for high-frequency silicon applications requiring stable performance in compact form factors.