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The BFR92WH6327XTSA1 is an NPN radio frequency bipolar junction transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 15V and supports a continuous collector current of 45mA. The device features a transition frequency of 5GHz and a maximum power dissipation of 280mW. Packaged in the PG-SOT323 surface-mount format, it exhibits a noise figure ranging from 1.4dB to 2dB at frequencies between 900MHz and 1.8GHz. DC current gain (hFE) is specified at a minimum of 70 when tested at 15mA and 8V.
Verify component authenticity through authorized distribution channels. Confirm that the specific suffix matches the required package and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any end-of-life notices or alternative sourcing requirements before finalizing procurement plans.
Select this component when a low-noise NPN transistor is required for 5GHz operations. Compare the 280mW power limit against thermal constraints. Verify that the PG-SOT323 footprint aligns with the PCB layout. Consider the hFE minimum of 70 for biasing calculations in amplifier designs.
This part belongs to the BFR92 series of RF transistors designed for high-performance applications. It utilizes silicon technology and is housed in a compact SMD package. The product line targets industries requiring reliable semiconductor solutions for signal integrity and frequency stability.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer resources for cross-reference data.