BFR93AWH6327XTSA1

Overview

The BFR93AWH6327XTSA1 is an NPN silicon RF bipolar junction transistor manufactured by Infineon Technologies. It operates with a collector-emitter breakdown voltage of 12V and supports a maximum continuous collector current of 45mA. The device features a transition frequency of 6GHz, making it suitable for high-frequency applications. It is housed in a PG-SOT-323 surface-mount package and complies with RoHS standards. The component is designed for efficient signal amplification in radio frequency circuits.

Feature Summary

• Optimized for low-noise amplification in wireless communication systems
• High transition frequency supporting GHz-range operations
• Compact SMD packaging for space-constrained designs

Applications

• Wireless LAN (WLAN) modules
• Mobile phone front-end circuits
• General RF amplification stages

Procurement Notes

Verify the specific suffix H6327XTSA1 to ensure correct reel packaging and tape specifications. Confirm AEC-Q101 automotive qualification status if required for your application, as standard variants may differ. Check for end-of-life notices or alternative recommendations from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a small-signal NPN transistor with a 6GHz transition frequency is needed. Ensure the PG-SOT-323 footprint matches the PCB layout. Compare noise figure requirements against other BFR series options if ultra-low noise is critical for the specific frequency band.

Part Context

This part belongs to the BFR93A series of RF transistors from Infineon. It shares the same basic electrical characteristics as the BFR93A but includes specific packaging and ordering suffixes for automated assembly. It is distinct from higher-power variants like the BFP series.

Replacement Considerations

Direct substitutes include the BFR93AWH6327XTSA1 without the 'A' prefix if minor parameter variations are acceptable. Verify pinout compatibility with PG-SOT-323 packages before substitution.