BFR949L3E6327

Overview

The BFR949L3E6327 is an NPN silicon RF bipolar transistor from Infineon Technologies, designed for high-frequency applications. It features a maximum collector-emitter voltage of 10V and supports a continuous DC collector current of 50mA. The device operates at frequencies up to 9GHz with a power dissipation rating of 250mW. Packaged in the compact PG-TSLP-3-1 surface-mount format, it offers reliable performance for RF signal processing tasks within specified thermal and electrical limits.

Feature Summary

• NPN silicon construction optimized for radio frequency signal amplification
• High-frequency operation capability reaching 9GHz
• Compact surface-mount packaging for efficient board space utilization

Applications

• RF signal amplification in communication systems
• High-frequency circuit design requiring low noise performance
• Wireless infrastructure components operating at GHz ranges

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm package integrity upon receipt, as SMD components are sensitive to physical damage. Check datasheet revisions for any updates to electrical characteristics or handling instructions before integration into production designs.

Selection Notes

Select this component when designing circuits requiring NPN RF transistors with 10V VCEO and 9GHz operational limits. Ensure thermal management strategies accommodate the 250mW power dissipation in the TSLP package. Validate compatibility with existing PCB footprints and soldering profiles specific to the PG-TSLP-3-1 form factor.

Part Context

This part belongs to Infineon's BFR series of RF bipolar transistors, which are engineered for high-performance analog and RF applications. The L3 suffix typically denotes specific packaging or variant configurations within the family. These transistors are widely used in telecommunications and consumer electronics where small size and high frequency response are critical.