BFS 460L6 E6327

Overview

The BFS460L6 E6327 is an NPN silicon RF twin transistor from Infineon Technologies, housed in a TSLP-6-1 leadless package. It features a high transition frequency (fT) of 22 GHz at IC=30 mA and VCE=3 V. The device offers low noise performance, with a typical noise figure of 1.1 dB at 1.8 GHz and 1.4 dB at 3 GHz. Maximum ratings include a collector-emitter voltage (VCEO) of 4.5 V and total power dissipation of 200 mW. Electrical characteristics specify a DC current gain (hFE) of 90–160 and a maximum stable power gain of 14.5 dB at 1.8 GHz.

Feature Summary

• Integrated twin transistor configuration within the world's smallest SMD 6-pin leadless package
• Optimized for low voltage and low current RF applications
• High transition frequency supporting operations up to 22 GHz
• Low noise figure suitable for sensitive signal amplification

Applications

• Voltage Controlled Oscillator (VCO) modules
• Low Noise Amplifiers (LNAs)
• RF front-end circuits requiring compact form factors

Procurement Notes

Verify component authenticity by checking the marking code AB against official Infineon documentation. Confirm the package type is TSLP-6-1 and the suffix E6327 matches the required reel quantity. Ensure handling precautions are observed due to Electrostatic Discharge (ESD) sensitivity. Cross-reference the datasheet revision date to ensure compatibility with design specifications.

Selection Notes

Select this component for designs requiring dual NPN transistors in minimal space. Verify that the operating voltage remains below 4.5 V and current stays within 50 mA limits. Consider the thermal resistance of 230 K/W for heat dissipation planning. Ensure impedance matching networks account for the specified capacitance values at target frequencies.

Part Context

This part belongs to the BFS460 series of NPN silicon RF transistors. The internal die structure utilizes BFR460L3 components for both transistors TR1 and TR2. The E6327 suffix typically denotes tape and reel packaging for automated assembly. It serves as a compact alternative to discrete dual-transistor solutions in RF module designs.

Replacement Considerations

Direct substitutes may include other Infineon BFS series variants with compatible pinouts and electrical ratings. Verify that any replacement maintains the TSLP-6-1 package dimensions and fT specifications. Check if alternative parts offer similar noise figures and power gain characteristics for the specific application frequency.