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The BFS469L6 E6327 is an NPN silicon RF twin transistor manufactured by Infineon Technologies. It integrates two distinct transistors within a TSLP-6-1 leadless package: TR1 utilizes the BFR460L3 die, and TR2 utilizes the BFR949L3 die. The device supports low voltage and low current applications with maximum collector-emitter voltages of 4.5 V for TR1 and 10 V for TR2. Maximum collector currents are rated at 50 mA for TR1 and 70 mA for TR2. Total power dissipation reaches 200 mW for TR1 and 250 mW for TR2. Electrical characteristics include a transition frequency (fT) of 16 GHz for TR1 and 9 GHz for TR2. Noise figures are specified at 1.1 dB for TR1 and 1.0 dB for TR2 at 1.8 GHz.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the specific ordering suffix matches the required package and tape-and-reel specifications. Ensure handling precautions are strictly followed due to electrostatic discharge sensitivity inherent in the semiconductor construction.
Select this component when space constraints require dual RF functions in a minimal footprint. Evaluate the distinct electrical profiles of TR1 and TR2 against circuit requirements, as they utilize different underlying die technologies. Verify that the operating voltage remains within the 4.5 V limit for TR1 and 10 V limit for TR2.
This part belongs to the BFS469L6 series from Infineon Technologies. It serves as a specialized RF solution combining two different transistor types into a unified assembly. The internal architecture relies on the BFR460L3 and BFR949L3 die configurations to provide optimized performance for specific high-frequency tasks.
No public confirmed substitute part numbers are available.