BFS 469L6 E6327

BFS 469L6 E6327

$0.17
  • Description:RF TRANS 2 NPN 5V/10V 9GHZ TSLP
  • Series:-

SKU:e8af04f364d9 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS 2 NPN 5V/10V 9GHZ TSLP
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max):5V, 10V
  • Frequency - Transition:22GHz, 9GHz
  • Noise Figure (dB Typ @ f):1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
  • Gain:14.5dB
  • Power - Max:200mW, 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:130 @ 20mA, 3V / 100 @ 5mA, 3V
  • Current - Collector (Ic) (Max):50mA, 70mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-XFDFN
  • Supplier Device Package:TSLP-6-1
  • Grade:-
  • Qualification:-

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BFS 469L6 E6327

Overview

The BFS469L6 E6327 is an NPN silicon RF twin transistor manufactured by Infineon Technologies. It integrates two distinct transistors within a TSLP-6-1 leadless package: TR1 utilizes the BFR460L3 die, and TR2 utilizes the BFR949L3 die. The device supports low voltage and low current applications with maximum collector-emitter voltages of 4.5 V for TR1 and 10 V for TR2. Maximum collector currents are rated at 50 mA for TR1 and 70 mA for TR2. Total power dissipation reaches 200 mW for TR1 and 250 mW for TR2. Electrical characteristics include a transition frequency (fT) of 16 GHz for TR1 and 9 GHz for TR2. Noise figures are specified at 1.1 dB for TR1 and 1.0 dB for TR2 at 1.8 GHz.

Feature Summary

  • Integrates two separate NPN silicon RF transistors on single dies within one compact package
  • Designed specifically for very low voltage and low current operational environments
  • Features world's smallest SMD 6-pin leadless package configuration

Applications

  • Voltage Controlled Oscillator (VCO) modules
  • Low noise amplifier circuits

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the specific ordering suffix matches the required package and tape-and-reel specifications. Ensure handling precautions are strictly followed due to electrostatic discharge sensitivity inherent in the semiconductor construction.

Selection Notes

Select this component when space constraints require dual RF functions in a minimal footprint. Evaluate the distinct electrical profiles of TR1 and TR2 against circuit requirements, as they utilize different underlying die technologies. Verify that the operating voltage remains within the 4.5 V limit for TR1 and 10 V limit for TR2.

Part Context

This part belongs to the BFS469L6 series from Infineon Technologies. It serves as a specialized RF solution combining two different transistor types into a unified assembly. The internal architecture relies on the BFR460L3 and BFR949L3 die configurations to provide optimized performance for specific high-frequency tasks.

Replacement Considerations

No public confirmed substitute part numbers are available.

BFS 469L6 E6327BFS 469L6 E6327
$0.17
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