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Product Detailed Parameters
- Description：RF TRANS NPN 11V 3.2GHZ SOT-23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：11V
- Frequency - Transition：3.2GHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：310mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：56 @ 5mA, 10V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BFS17NQTA is an NPN silicon RF transistor manufactured by Diodes Incorporated, designed for high-frequency applications. It is housed in a surface-mount SOT-23-3 package and carries AEC-Q101 qualification for automotive reliability. The device supports a maximum DC collector current of 50 mA with a power dissipation rating of 350 mW. Key electrical parameters include a collector-emitter breakdown voltage (VCEO) of 11 V, a collector-base voltage (VCBO) of 20 V, and an emitter-base voltage (VEBO) of 3 V. It features a transition frequency (fT) of 3.2 GHz and a DC current gain (hFE) ranging from 56 to 180. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- AEC-Q101 qualified for automotive-grade reliability standards
- High-speed RF performance with 3.2 GHz transition frequency
- Compact SOT-23-3 surface-mount packaging for space-constrained designs
Applications
- RF amplifier stages in communication systems
- Automotive electronics requiring qualified discrete semiconductors
- General-purpose high-frequency switching circuits
Procurement Notes
Verify the complete part number including the suffix against official Diodes Incorporated documentation to ensure correct configuration. Confirm RoHS compliance status through the manufacturer's certificate. Check for any specific handling requirements related to the SMD package during assembly. Ensure the supplier provides traceability data consistent with automotive qualification standards if required for the end application.
Selection Notes
Select this component when an NPN RF transistor with AEC-Q101 certification is required in an SOT-23-3 footprint. Compare the 3.2 GHz fT and 11 V VCEO limits against circuit requirements. Consider the 350 mW power dissipation and 50 mA current limits for thermal management. Verify compatibility with existing PCB layouts designed for SOT-23-3 packages.
Part Context
The BFS17NQTA belongs to the BFS17 series of bipolar junction transistors from Diodes Incorporated. This series focuses on RF applications utilizing silicon technology. The NPN configuration is standard for common-emitter amplification tasks. The product falls under the broader category of discrete semiconductors and bipolar transistors.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official replacement guides or engineering change notices from Diodes Incorporated.
