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Product Detailed Parameters
- Description：RF TRANS NPN 11V 3.2GHZ SOT-23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：11V
- Frequency - Transition：3.2GHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：330mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：56 @ 5mA, 10V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BFS17NTA is a single NPN bipolar junction transistor manufactured by Diodes Incorporated, designed for radio frequency applications. It operates within a collector-emitter voltage range of up to 11 V and supports a maximum DC collector current of 50 mA. The device features a gain bandwidth product (fT) of 3.2 GHz, enabling high-frequency performance. Electrical characteristics include a collector-base voltage of 20 V and an emitter-base voltage of 3 V. Power dissipation is rated at 330 mW. The component functions reliably across an operating temperature range from -55 °C to +150 °C and is housed in a compact SOT-23-3 surface-mount package.
Feature Summary
- Optimized for RF signal amplification with a 3.2 GHz transition frequency
- High thermal stability supporting operation up to 150 °C
- Compact SOT-23-3 footprint suitable for space-constrained designs
Applications
- RF amplifier stages in communication equipment
- Signal processing circuits requiring high-frequency response
- Wireless transmission modules
Procurement Notes
Verify the specific manufacturer part number against official Diodes Incorporated documentation to confirm electrical tolerances and packaging details. Ensure that the sourcing channel provides authentic components with traceable origin. Cross-reference datasheet revisions to validate compatibility with design requirements before procurement.
Selection Notes
Select this component when a single NPN transistor with a 3.2 GHz gain bandwidth product is required for RF applications. Confirm that the 11 V collector-emitter voltage and 50 mA current limits align with circuit demands. Verify that the SOT-23-3 package dimensions fit the PCB layout constraints and that the thermal management strategy accommodates the 330 mW power dissipation rating.
Part Context
This component belongs to the BFS17 series of RF transistors produced by Diodes Incorporated. It shares similar electrical specifications with variants such as the BFS17NQTA, which includes AEC-Q101 automotive qualification. Both devices utilize the same SOT-23-3 package and NPN configuration, serving as standard solutions for general-purpose RF amplification tasks.
Replacement Considerations
The BFS17NQTA serves as a qualified alternative within the same series, offering identical core electrical parameters including the 3.2 GHz fT and SOT-23-3 package. Designers should verify if automotive qualification is necessary, as the NQTA variant meets AEC-Q101 standards while the standard BFS17NTA may not.
