BFS17WH6327XTSA1

Overview

The BFS17WH6327XTSA1 is an NPN RF bipolar power transistor manufactured by Infineon Technologies. It operates at a maximum frequency of 1 GHz with a collector-emitter breakdown voltage (VCEO) of 15 V and an emitter-base voltage (VEBO) of 2.5 V. The device supports a continuous collector current of 25 mA and dissipates up to 280 mW of power. It is housed in a surface-mount SOT-323 package, suitable for compact designs. The component meets AEC-Q100 automotive qualification standards and functions within a temperature range of -65 °C to +150 °C.

Feature Summary

• Automotive-grade reliability certified under AEC-Q100 standards
• High-frequency operation capability up to 1 GHz
• Compact surface-mount SOT-323 packaging for space-constrained applications

Applications

• RF amplifier circuits requiring high-frequency signal processing
• Automotive electronic systems demanding qualified discrete transistors
• General-purpose RF switching and amplification tasks

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact binning or tape-and-reel specifications. Confirm current lifecycle status as distribution records indicate potential discontinuation. Ensure compatibility with existing PCB footprints and thermal management requirements before finalizing procurement decisions.

Selection Notes

Select this component when an NPN RF transistor with 15 V breakdown and 25 mA current capacity is required in an SOT-323 package. Consider the 280 mW power dissipation limit and -65 °C to +150 °C operating range for environmental suitability. Verify that the 1 GHz frequency response aligns with the target application's signal bandwidth requirements.

Part Context

This part belongs to the BFS17 series of RF bipolar transistors from Infineon. The H6327 suffix typically denotes specific manufacturing lot or packaging variations managed by the original equipment manufacturer. It serves as a discrete semiconductor solution for radio frequency applications where small form factor and automotive qualification are prioritized over high-power handling.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Evaluate alternative NPN RF transistors with similar VCEO, Ic, and package constraints only after verifying electrical parameter equivalence through official datasheets.