BFS25A,115

Overview

The BFS25A,115 is an NPN silicon wideband transistor manufactured by NXP Semiconductors. It is housed in a four-lead dual emitter SOT143B plastic package featuring cross-emitter construction. The device is designed for RF low power amplifier applications, including pocket telephones and paging systems, with operational signal frequencies up to 2 GHz. Key electrical characteristics include a transition frequency (fT) of 5 GHz and a noise figure optimized for low-noise performance. The component supports low current consumption ranging from 100 µA to 1 mA and utilizes gold metallization to ensure excellent reliability under operating conditions.

Feature Summary

• Low noise figure design suitable for sensitive RF front-end stages
• Gold metallization structure providing enhanced long-term reliability
• Dual emitter configuration within a compact SOT143B package

Applications

• RF low power amplifiers in mobile communication devices
• Paging system receiver circuits
• Pocket telephone transmitter stages

Part Context

The BFS25A belongs to NXP's family of NPN 5 GHz wideband transistors. This series includes related part numbers such as BFG25A, BFR92AT, and BFQ19, which share similar high-frequency performance profiles. These components are engineered for wireless communication infrastructure and portable electronic devices requiring efficient signal amplification at UHF and VHF bands.

Replacement Considerations

Publicly confirmed substitute part numbers for the BFS25A are not available in the provided documentation. Designers should consult official NXP replacement guides or verify compatibility with similar wideband transistors like the BFG25A based on specific circuit requirements.