BFS483H6327XTSA1

BFS483H6327XTSA1

$0.53
  • Description:RF TRANS 2 NPN 12V 8GHZ SOT363-6
  • Series:-

SKU:d92524ca4532 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS 2 NPN 12V 8GHZ SOT363-6
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:8GHz
  • Noise Figure (dB Typ @ f):0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
  • Gain:19dB
  • Power - Max:450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 15mA, 8V
  • Current - Collector (Ic) (Max):65mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO
  • Grade:-
  • Qualification:-

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BFS483H6327XTSA1

Overview

The BFS483H6327XTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It integrates two galvanically isolated transistors within a single SOT-363 package. The device features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. Key electrical parameters include a collector-emitter breakdown voltage (VCEO) of 12 V, a maximum collector current (IC) of 65 mA, and a total power dissipation (Ptot) of 450 mW at a case temperature of 40 °C. The component operates within an ambient temperature range of -65 °C to 150 °C.

Feature Summary

  • Integrates two galvanically isolated transistors in one compact package
  • Optimized for low noise and high-gain broadband amplifier applications
  • High transition frequency supporting operation up to 8 GHz
  • RoHS compliant and halogen-free with visible leads

Applications

  • Low noise, high-gain broadband amplifiers
  • RF signal processing circuits requiring dual isolated stages

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as reel specifications or tape-and-reel quantities. Confirm that the AEC-Q101 qualification report aligns with project requirements. Ensure handling precautions are observed due to electrostatic discharge sensitivity. Check for any end-of-life status updates directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring dual isolated RF stages within a minimal footprint. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the target application. Consider the specific biasing conditions required to achieve the stated noise figure and gain performance metrics at the operating frequency.

Part Context

This part belongs to the BFS483 series of low noise silicon bipolar RF transistors produced by Infineon Technologies. It is designed specifically for radio frequency applications where space constraints and isolation between stages are critical design factors. The SOT-363 package provides a standardized surface-mount solution for integrating multiple active elements.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

BFS483H6327XTSA1BFS483H6327XTSA1
$0.53
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