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The BFS483H6327XTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It integrates two galvanically isolated transistors within a single SOT-363 package. The device features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. Key electrical parameters include a collector-emitter breakdown voltage (VCEO) of 12 V, a maximum collector current (IC) of 65 mA, and a total power dissipation (Ptot) of 450 mW at a case temperature of 40 °C. The component operates within an ambient temperature range of -65 °C to 150 °C.
Verify the specific ordering suffix against official documentation to confirm packaging details such as reel specifications or tape-and-reel quantities. Confirm that the AEC-Q101 qualification report aligns with project requirements. Ensure handling precautions are observed due to electrostatic discharge sensitivity. Check for any end-of-life status updates directly from the manufacturer before finalizing procurement plans.
Select this component when designing circuits requiring dual isolated RF stages within a minimal footprint. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the target application. Consider the specific biasing conditions required to achieve the stated noise figure and gain performance metrics at the operating frequency.
This part belongs to the BFS483 series of low noise silicon bipolar RF transistors produced by Infineon Technologies. It is designed specifically for radio frequency applications where space constraints and isolation between stages are critical design factors. The SOT-363 package provides a standardized surface-mount solution for integrating multiple active elements.
Public confirmed substitute part numbers are not available in the provided documentation.