BFS520

Overview

The BFS520 is a high-frequency low-noise NPN silicon transistor manufactured by EVVO using planar epitaxial bipolar technology. It features a maximum collector-emitter breakdown voltage of 12V and a collector-base breakdown voltage of 20V, with a maximum continuous collector current of 100mA and total power dissipation of 150mW. The device exhibits a typical transition frequency (fT) of 8GHz at VCE=6V and IC=20mA. DC current gain (hFE) ranges from 90 to 250 depending on the binning grade. Key RF characteristics include a typical noise figure of 1.5dB at 1GHz and a power gain of 12.5dB under standard test conditions.

Feature Summary

• Utilizes planar NPN silicon epitaxial process for high power gain and low noise performance
• Designed for high-density surface mount applications via compact SOT-323 packaging
• Optimized for stable operation in VHF, UHF, and CATV frequency bands

Applications

• High-frequency low-noise amplifiers
• VHF and UHF signal processing circuits
• CATV system components

Procurement Notes

Verify the specific hFE binning grade required for your circuit design, as the manufacturer offers distinct performance tiers including B, C, and D grades. Confirm that the SOT-323 package dimensions align with your PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high gain and minimal noise addition in the GHz range. Ensure biasing conditions match the specified test parameters for optimal noise figure and gain performance. Consider thermal management capabilities given the 150mW power dissipation limit in the small outline package.

Part Context

This component belongs to the category of ultra-high-frequency low-noise transistors designed for RF front-end applications. It serves as a critical active element in signal chains where preserving signal integrity against thermal noise is paramount, particularly in broadcast and communication infrastructure.

Replacement Considerations

Cross-reference pinout compatibility if substituting in existing designs. Verify that alternative devices meet or exceed the 8GHz transition frequency and 1.5dB noise figure specifications to maintain system performance levels.