BFS520,115

$0.45

Description：RF TRANS NPN 15V 9GHZ SC-70
Series：-

SKU:e36096d72485 Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 15V 9GHZ SC-70
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：15V
Frequency - Transition：9GHz
Noise Figure (dB Typ @ f)：1.1dB ~ 2.1dB @ 900MHz
Gain：-
Power - Max：300mW
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 20mA, 6V
Current - Collector (Ic) (Max)：70mA
Operating Temperature：175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70
Grade：-
Qualification：-

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BFS520,115

Overview

The BFS520,115 is an NPN wideband transistor housed in a plastic SOT323 (SC-70) surface-mounted envelope. It is designed for high-frequency applications with signal frequencies up to 2 GHz. Key electrical parameters include a transition frequency of 9 GHz and a maximum unilateral power gain of 15 dB at 900 MHz. The device supports a DC collector current of 70 mA and total power dissipation of 300 mW. Noise figures range from 1.1 dB to 1.6 dB at 900 MHz depending on bias conditions.

Feature Summary

High transition frequency suitable for wideband RF applications
Low noise figure characteristics optimized for signal reception
Gold metallization ensures excellent reliability
Plastic SOT323 envelope for compact surface-mount integration

Applications

Satellite TV tuners
Cellular phones
Cordless phones
Pagers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current product status documentation before finalizing procurement plans. Confirm that the component meets all required environmental and safety standards for the intended deployment environment. Ensure compatibility with existing supply chain protocols and quality assurance requirements.

Selection Notes

Select this component for designs requiring high-frequency amplification within the VHF/UHF spectrum. Evaluate thermal resistance constraints carefully, as the junction-to-soldering point thermal resistance is 190 K/W. Ensure biasing circuits maintain collector-emitter voltage within the 15 V limit and keep power dissipation below 300 mW to prevent permanent damage.

Part Context

This part belongs to the discrete semiconductor category, specifically wideband transistors manufactured by NXP Semiconductors. It serves as a foundational active component for radio frequency front-end stages in consumer communication devices. The SOT323 package allows for automated assembly in space-constrained mobile electronics.