BFT25A,215

Overview

The BFT25A,215 is a silicon NPN transistor manufactured by NXP Semiconductors. It is designed for RF low power amplifier applications with signal frequencies up to 2 GHz and operates at maximum frequencies of 5000 MHz. The device features a maximum DC collector current of 7 mA and a maximum collector-emitter voltage of 5 V. It has a maximum collector-base voltage of 8 V and a maximum emitter-base voltage of 2 V. The component dissipates up to 32 mW of power and functions within an operating temperature range up to +175 °C. It is housed in a 3-pin SOT-23 (TO-236AB) plastic surface-mount package measuring 1 x 3 x 1.4 mm.

Feature Summary

• Silicon NPN construction optimized for wideband RF performance
• Suitable for pocket telephones and paging systems
• Encapsulated in a compact 3-pin plastic SOT23 envelope

Applications

• RF low power amplifiers
• Pocket telephones
• Paging systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets RoHS compliance standards as indicated in historical records. Ensure design compatibility with the specified SOT-23 footprint and thermal requirements before integration into final assemblies.

Selection Notes

Select this component for designs requiring small form factor RF amplification. Verify that the 5 V collector-emitter voltage rating aligns with circuit supply levels. Consider the 32 mW power dissipation limit when designing thermal management solutions for dense PCB layouts.

Part Context

The BFT25A belongs to NXP's portfolio of silicon NPN transistors intended for radio frequency applications. This specific part number represents a discontinued product line, with information retained primarily for historical reference and legacy system maintenance purposes.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.