BFU520R

BFU520R

$0.32
  • Description:RF TRANS NPN 12V 10.5GHZ SOT143B
  • Series:-

SKU:49635636dd03 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 10.5GHZ SOT143B
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:10.5GHz
  • Noise Figure (dB Typ @ f):0.65dB @ 900MHz
  • Gain:20dB
  • Power - Max:450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 8V
  • Current - Collector (Ic) (Max):30mA
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:SOT-143B
  • Grade:Automotive
  • Qualification:AEC-Q101

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BFU520R

Overview

The BFU520R is an NPN wideband silicon RF transistor from the BFU5 family, designed for high-speed, low-noise applications up to 2 GHz. It utilizes 11 GHz fT technology and features a plastic SOT143B surface-mounted package with four leads. The device is AEC-Q101 qualified for automotive use. Key electrical parameters include a collector-emitter voltage (VCEO) of 12 V, a maximum collector current (IC) of 30 mA, and a total power dissipation (Ptot) of 450 mW at a solder point temperature of 87 °C or less. At 900 MHz, it achieves a minimum noise figure of 0.65 dB and a maximum stable gain of 20 dB.

Feature Summary

  • Low noise performance suitable for sensitive signal reception
  • High breakdown voltage capability for robust operation
  • Qualified for automotive electronics standards

Applications

  • Broadband amplifiers operating up to 2 GHz
  • Low noise amplifiers for ISM band applications
  • ISM band oscillators

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm manufacturing origin and compliance status. Confirm that the component meets the required automotive qualification standards if intended for such environments. Ensure proper ESD handling procedures are followed during storage and assembly due to the sensitivity of the semiconductor junction.

Selection Notes

Select this component for designs requiring small-signal to medium-power RF amplification within the sub-2 GHz range. Evaluate the thermal resistance characteristics and ensure the application board layout supports the specified heat transfer properties. Verify that the biasing conditions align with the recommended operating conditions to maintain optimal noise figure and gain performance across the desired frequency spectrum.

Part Context

The BFU520R belongs to the BFU5 series of NPN wideband silicon RF transistors manufactured by NXP Semiconductors. This series is engineered for applications demanding high linearity and low noise figures in compact surface-mount packages. The R suffix typically denotes reel packaging, distinguishing it from cut-tape variants while maintaining identical electrical specifications and physical dimensions as other BFU520 package types.

Replacement Considerations

BFU520A

FAQ

What is the transition frequency (fT) of the BFU520R?

The transition frequency is 10.5 GHz when measured at IC = 10 mA, VCE = 8 V, and f = 900 MHz.

Is the BFU520R suitable for automotive applications?

Yes, the BFU520 is AEC-Q101 qualified for use in automotive electronics.

What is the maximum collector-emitter voltage (VCEO)?

The maximum collector-emitter voltage with the base open is 12 V.

BFU520RBFU520R
$0.32
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