BFU520VL

$0.09

Description：RF TRANS NPN 12V 10.5GHZ SOT143B
Series：-

SKU:b981aa26e2fb Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 10.5GHZ SOT143B
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：10.5GHz
Noise Figure (dB Typ @ f)：1.1dB @ 1.8GHz
Gain：17.5dB
Power - Max：450mW
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 8V
Current - Collector (Ic) (Max)：30mA
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-253-4, TO-253AA
Supplier Device Package：SOT-143B
Grade：-
Qualification：-

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BFU520VL

Overview

The BFU520VL is an NPN wideband silicon RF transistor from the BFU5 family, designed for high-speed, low-noise applications up to 2 GHz. It utilizes 11 GHz fT technology and features a plastic SOT143B package with dual emitters. Key electrical parameters include a collector-emitter voltage (VCEO) of 12 V, a maximum collector current (IC) of 30 mA, and a total power dissipation (Ptot) of 450 mW at a solder point temperature of 87 °C. The device achieves a minimum noise figure of 0.65 dB at 900 MHz and offers a maximum stable gain of 20 dB at the same frequency.

Feature Summary

AEC-Q101 qualified for automotive reliability
Low noise performance optimized for signal integrity
High breakdown voltage capability for robust operation

Applications

Broadband amplifiers operating up to 2 GHz
Low noise amplifiers for ISM band applications
ISM band oscillators

Procurement Notes

Verify the specific suffix 'VL' against the official NXP ordering information table to confirm packaging orientation or tape-and-reel specifications. Confirm that the component status remains active or check for obsolescence notices prior to finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring high supply voltages and high breakdown characteristics. Ensure the application board layout supports the thermal resistance requirements specified in the data sheet to maintain junction temperatures within safe operating limits during continuous RF operation.

Part Context

This part belongs to the BFU5 series of NPN wideband silicon RF transistors manufactured by NXP Semiconductors. The series is engineered for small-signal to medium-power applications, providing a balance of low noise and high gain suitable for various radio frequency circuit designs.