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Product Detailed Parameters
- Description：RF TRANS NPN 12V 11GHZ SOT-143B
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：11GHz
- Noise Figure (dB Typ @ f)：1.1dB @ 1.8GHz
- Gain：15.5dB
- Power - Max：450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 8V
- Current - Collector (Ic) (Max)：40mA
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-253-4, TO-253AA
- Supplier Device Package：SOT-143B
- Grade：-
- Qualification：-
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Overview
The BFU530 is an NPN silicon RF transistor designed for high-speed, low-noise applications in a plastic SOT143B package. It features 11 GHz fT technology and AEC-Q101 qualification. Key electrical parameters include a collector-base voltage of 24 V (open emitter) or 30 V (shorted base), and a collector-emitter voltage of 12 V (open base) or 24 V (shorted base). The transition frequency is 11 GHz at IC=15 mA and VCE=8 V. Maximum stable gain reaches 21.5 dB at 900 MHz with minimum noise figure of 0.7 dB. DC current gain ranges from 60 to 200 at IC=10 mA and VCE=8 V.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- High breakdown voltage capability for robust operation
- Low noise figure optimized for sensitive signal reception
- Dual-emitter configuration for improved thermal performance
Applications
- Broadband amplifiers up to 2 GHz
- Low noise amplifiers for ISM band applications
- ISM band oscillators
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm manufacturing origin, as markings indicate production in Malaysia or China. Ensure the component matches the SOT143B package outline dimensions and pin configuration before integration into the design.
Selection Notes
Select this device for designs requiring high supply voltages and wide bandwidths up to 2 GHz. Consider the dual-emitter structure for thermal management in small-signal to medium-power applications. Verify that the operating conditions remain within the recommended limits for junction temperature and power dissipation.
Part Context
The BFU530 belongs to the BFU5 family of transistors, which are engineered for small-signal to medium-power RF tasks. This family shares similar architectural traits but varies in specific breakdown and gain characteristics to suit different frequency and power requirements across industrial and automotive sectors.
Replacement Considerations
BFU520
FAQ
What is the maximum collector-base voltage when the base is shorted?
When the base is shorted, the maximum collector-base voltage rating is 30 V.
Is the BFU530 suitable for automotive applications?
Yes, the BFU530 is AEC-Q101 qualified for use in automotive environments.
What is the typical transition frequency at 15 mA collector current?
The typical transition frequency is 11 GHz when measured at IC = 15 mA and VCE = 8 V.
