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The BFU550 is an NPN wideband silicon RF transistor designed for high-speed, low-noise applications in a plastic SOT143B package. It features 11 GHz fT technology and supports small signal to medium power operations up to 2 GHz. Key electrical parameters include a collector-base voltage of 24 V (open emitter) and a maximum stable gain of 21 dB at 900 MHz. The device achieves a minimum noise figure of 0.7 dB at 900 MHz with a collector current of 1 mA. It offers a transition frequency of 11 GHz at 25 mA and 8 V, with a total power dissipation of 450 mW.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm manufacturing origin and compliance status. Ensure the component matches the required AEC-Q101 qualification if used in automotive designs. Confirm package integrity upon receipt as the device is sensitive to electrostatic discharge during handling.
Select this transistor when designing circuits requiring high breakdown voltages combined with low noise figures in the sub-2 GHz range. Consider the 11 GHz transition frequency for broadband stability. Evaluate the SOT143B package constraints for thermal resistance and PCB layout requirements to ensure the junction temperature remains within the recommended operating limits.
The BFU550 belongs to the BFU5 family of transistors from NXP Semiconductors. This series is engineered for small signal to medium power RF applications. The BFU550 specifically targets scenarios demanding high supply voltages and high breakdown characteristics while maintaining low noise performance across a wide bandwidth.
OM7962 is a customer evaluation kit containing BFU550 samples alongside BFU520 and BFU530 variants for design verification purposes.