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Product Detailed Parameters
- Description：RF TRANS NPN 12V 11GHZ SC-70
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：11GHz
- Noise Figure (dB Typ @ f)：1.3dB @ 1.8GHz
- Gain：12dB
- Power - Max：450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 15mA, 8V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70
- Grade：-
- Qualification：-
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Overview
The BFU550W is an NPN silicon RF transistor designed for high-speed, low-noise applications in a plastic SOT323 package. It supports small signal to medium power operations up to 2 GHz with 11 GHz fT technology. Key electrical parameters include a collector-base voltage of 24 V and a maximum stable gain of 18 dB at 900 MHz. The device achieves a minimum noise figure of 0.6 dB at 900 MHz. It is AEC-Q101 qualified for automotive environments.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- High breakdown voltage capabilities
- Low noise performance optimized for RF amplification
- Integrated into the BFU5 family for broadband utility
Applications
- Broadband amplifiers up to 2 GHz
- Low noise amplifiers for ISM applications
- ISM band oscillators
Procurement Notes
Verify component authenticity by checking the marking code against official documentation. Confirm the package type matches the required SOT323 footprint. Ensure the operating conditions remain within the specified absolute maximum ratings to prevent device degradation or failure during deployment.
Selection Notes
Select this component when high supply voltages and breakdown ratings are required for RF designs. Consider the specific biasing requirements for optimal noise figure versus gain trade-offs. Evaluate thermal management needs based on the total power dissipation limits and solder point temperature constraints.
Part Context
The BFU550W belongs to the BFU5 family of transistors from NXP Semiconductors. This series includes variants like the BFU520W and BFU530W, offering different performance characteristics within the same package form factor. The family is designed for consistent integration into various RF and microwave circuit architectures.
Replacement Considerations
Official evaluation kits contain samples of BFU520W, BFU530W, and BFU550W for comparison. Designers should verify pin compatibility and electrical parameter overlaps before substituting these family members in existing layouts.
FAQ
What is the transition frequency (fT) of the BFU550W?
The BFU550W utilizes 11 GHz silicon technology, providing a transition frequency of 11 GHz under standard test conditions.
Is the BFU550W suitable for automotive applications?
Yes, the BFU550W is AEC-Q101 qualified, making it suitable for use in automotive electronic systems.
What is the minimum noise figure at 900 MHz?
The minimum noise figure (NFmin) is typically 0.6 dB at a frequency of 900 MHz.
