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Product Detailed Parameters
- Description：RF TRANS NPN 5.5V 21GHZ 4-DFP
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：5.5V
- Frequency - Transition：21GHz
- Noise Figure (dB Typ @ f)：0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
- Gain：13dB ~ 22.5dB
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：90 @ 5mA, 2V
- Current - Collector (Ic) (Max)：30mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-343F
- Supplier Device Package：4-DFP
- Grade：-
- Qualification：-
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Overview
The BFU630F is an NPN silicon microwave transistor designed for high-speed, low-noise applications. It utilizes 40 GHz fT silicon technology and is housed in a plastic SOT343F dual-emitter package with reverse pinning. Key electrical parameters include a collector-base voltage of 16 V, collector-emitter voltage of 5.5 V, and maximum collector current of 30 mA. The device achieves a noise figure of 0.85 dB at 2.4 GHz and a maximum stable gain of 26 dB at 1.8 GHz. Transition frequency reaches 21 GHz under standard test conditions.
Feature Summary
- Low noise performance optimized for microwave communications systems
- High maximum stable gain suitable for broadband RF amplification
- Dual-emitter configuration within a compact surface-mounted flat pack
Applications
- Low noise amplifiers for microwave communications systems
- WLAN and CDMA applications
- Ku band oscillators and DROs
- LNB and GPS receivers
- Bluetooth and ZigBee modules
Procurement Notes
Verify the specific ordering suffix to confirm packaging details. Ensure ESD precautions are followed during handling as per ANSI/ESD S20.20 standards. Confirm component authenticity through authorized distribution channels before integration into final designs.
Selection Notes
Select this component for designs requiring low noise figures below 1 dB at 2.4 GHz. Evaluate thermal resistance requirements against the specified junction-to-solder point limit. Ensure biasing circuits accommodate the 5.5 V collector-emitter voltage constraint for reliable operation.
Part Context
This part belongs to the NXP wideband silicon RF transistor family. It serves as a discrete active element for RF front-end stages. The SOT343F package allows for efficient PCB space utilization in portable wireless devices requiring high-frequency signal processing.
Replacement Considerations
Consult official NXP documentation for verified substitute part numbers. Cross-referencing requires matching transition frequency, noise figure, and package dimensions to ensure functional compatibility without redesigning the host circuit board.
