BFU660F,115

Overview

The BFU660F is an NPN silicon microwave transistor designed for high-speed, low-noise applications. It utilizes 40 GHz fT silicon technology and features a plastic, 4-pin dual-emitter SOT343F package with reverse pinning. Key electrical parameters include a collector-base voltage of 16 V, collector-emitter voltage of 5.5 V, and total power dissipation of 225 mW at a solder point temperature ≤ 90 °C. The transition frequency reaches 21 GHz, while the maximum power gain is 24 dB at 1.8 GHz. Noise figure is typically 0.65 dB at 1.8 GHz, and the output third-order intercept point is 27 dBm at 1.8 GHz.

Feature Summary

• Low noise high linearity RF transistor
• High output third-order intercept point
• 40 GHz fT silicon technology

Applications

• Analog/digital cordless applications
• X-band high output buffer amplifier
• ZigBee
• SDARS second stage LNA
• LTE, cellular, UMTS

Procurement Notes

Verify the specific ordering suffix to confirm packaging details such as tape and reel specifications or quantity per carrier. Confirm RoHS compliance status and manufacturing origin codes marked on the device body against current production batches. Ensure ESD handling precautions are followed during assembly due to sensitivity described in standard guidelines.

Selection Notes

Select this component for broadband RF designs requiring high efficiency and thermal stability. Evaluate the SOT343F package constraints for PCB layout and thermal management requirements. Consider the dual-emitter configuration for improved performance metrics in low-noise amplification stages operating within the specified voltage and current limits.

Part Context

This device belongs to the NXP wideband silicon RF transistor family. It is engineered for microwave frequencies using advanced silicon processes. The product data sheet defines its absolute maximum ratings and characteristic curves for design integration into radio frequency systems requiring reliable signal processing.

Replacement Considerations

Check for direct cross-reference part numbers from NXP or other manufacturers offering identical pinouts and electrical characteristics. Verify that any substitute maintains the same SOT343F package dimensions and reverse pinning configuration to ensure mechanical compatibility without redesigning the footprint.

FAQ

What is the transition frequency (fT) of the BFU660F?

The transition frequency is 21 GHz when measured at IC = 20 mA, VCE = 1 V, and f = 2 GHz.

What is the maximum power dissipation rating?

The total power dissipation is 225 mW provided the temperature at the solder point of the emitter lead is less than or equal to 90 °C.

Does the BFU660F support automotive applications?

No, unless expressly stated otherwise, this product is not suitable for automotive use as it is not qualified or tested according to automotive standards.