BFU760F,115

$0.73

Description：RF TRANS NPN 2.8V 45GHZ 4-DFP
Series：-

SKU:2f469f8c4849 Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 2.8V 45GHZ 4-DFP
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：2.8V
Frequency - Transition：45GHz
Noise Figure (dB Typ @ f)：0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Gain：-
Power - Max：220mW
DC Current Gain (hFE) (Min) @ Ic, Vce：155 @ 10mA, 2V
Current - Collector (Ic) (Max)：70mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-343F
Supplier Device Package：4-DFP
Grade：-
Qualification：-

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BFU760F,115

Overview

The BFU760F,115 is an NPN silicon germanium microwave transistor designed for high-speed, low-noise applications. It utilizes 110 GHz fT SiGe:C technology and is housed in a plastic SOT343F surface-mount package with reverse pinning. Key electrical parameters include a maximum collector-emitter voltage of 2.8 V, a transition frequency of 45 GHz, and a total power dissipation of 220 mW at a solder point temperature ≤ 90 °C. The device offers a typical DC current gain of 330 and a noise figure as low as 0.4 dB at 1.5 GHz.

Feature Summary

Low noise high linearity RF transistor
High maximum output third-order intercept point
110 GHz fT silicon germanium technology

Applications

Ka band oscillators DRO’s
High linearity applications
Medium output power applications
Wi-Fi / WLAN / WiMAX
GPS
ZigBee
SDARS first stage LNA
LTE, cellular, UMTS

Procurement Notes

Verify the specific ordering suffix to confirm packaging configuration, as the base part number may be available in different reel or tape formats. Confirm RoHS compliance status and REACH registration details directly with the manufacturer or authorized distributors before finalizing procurement plans. Ensure ESD handling precautions are strictly followed during storage and assembly processes.

Selection Notes

Select this component for designs requiring wideband operation with high linearity and low noise figures in the sub-6 GHz range. Evaluate thermal management requirements carefully, as power dissipation is limited to 220 mW and depends on the solder point temperature. Verify that the operating voltage remains within the 2.8 V collector-emitter limit to prevent permanent damage.

Part Context

This device belongs to the BFU6xx/BFU7xx family of wideband transistors manufactured using QUBiC4 Si and SiGe:C technology. It serves as a discrete solution for RF front-end stages where high performance is required without the complexity of integrated modules. The SOT343F package provides a compact footprint suitable for dense PCB layouts in modern wireless communication devices.