BG 5130R E6327

Overview

The BG5130R is a dual N-channel MOSFET tetrode designed for low noise gain controlled input stages of UHF and VHF tuners. It operates with a supply voltage ranging from 3V to 5V and features integrated gate protection diodes. The device provides high forward transadmittance, low noise figure, and improved cross-modulation performance at gain reduction. Key electrical parameters include a drain-source breakdown voltage of 12V, continuous drain current of 25mA, and total power dissipation of 200mW. At 800MHz with VDS=3V and ID=10mA, it achieves a typical power gain of 24dB and a noise figure of 1.3dB.

Feature Summary

• Dual N-channel MOSFET tetrode architecture optimized for low noise applications
• Integrated gate protection diodes and partially integrated biasing network
• Low noise figure and high forward transadmittance for signal integrity
• Improved cross-modulation characteristics during gain reduction

Applications

• UHF tuner input stages
• VHF tuner input stages
• Low noise amplifier circuits

Procurement Notes

Verify the specific ordering suffix E6327XTSA1 against official Infineon documentation to confirm tape and reel packaging specifications. Ensure compliance with RoHS standards and halogen-free requirements as indicated in standard product markings. Confirm thermal management capabilities relative to the specified soldering point temperature limits during assembly.

Selection Notes

Select this component for designs requiring dual-channel amplification within a compact SOT363 package. Consider the 3V to 5V operating range and the need for AGC control via Gate 1. Evaluate the 200mW power dissipation limit against the expected thermal environment to ensure reliable operation without exceeding the channel temperature rating.

Part Context

This device belongs to Infineon's discrete semiconductor portfolio, specifically categorized under dual N-channel MOSFETs. It utilizes silicon technology housed in an SOT363 surface-mount package. The part is engineered for radio frequency front-end applications where low noise and precise gain control are critical for system performance.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify compatibility with the SOT363 footprint, matching pin configuration (G1, S, D, G2), and similar RF performance metrics such as noise figure and gain at target frequencies.