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The BG3130H6327XTSA1 is a dual N-Channel MOSFET tetrode designed for UHF and VHF tuner applications. It integrates two gain-controlled amplifiers within a single SOT-363 package, featuring integrated gate protection diodes. The device operates with a maximum drain-source voltage of 8V and continuous drain current of 25mA. At 800 MHz, it delivers a power gain of 24 dB with a noise figure of 1.3 dB. At 45 MHz, the power gain reaches 31 dB with a noise figure of 1.7 dB. The component supports a gain control range of 45 dB via AGC input.
Verify the specific ordering suffix against official Infineon documentation to confirm tape-and-reel specifications and marking codes. Confirm that the SOT-363 package dimensions align with target PCB footprints. Ensure ESD handling precautions are strictly followed during assembly due to the sensitivity of the MOSFET gates.
Select this component when a compact solution for dual-channel signal amplification is required in broadcast tuner designs. Evaluate the 8V drain-source voltage limit against system supply rails. Consider the 200 mW total power dissipation capability relative to ambient thermal conditions and heat sinking requirements on the printed circuit board.
This part belongs to Infineon's discrete MOSFET portfolio tailored for RF front-end modules. It serves as a specialized active component for analog signal processing in consumer electronics. The dual-tetrode configuration allows for space-constrained designs where multiple amplifier stages are necessary without increasing the overall footprint.
No official direct substitutes are listed in the provided datasheet. When evaluating alternatives, verify compatibility with the SOT-363 package and ensure the replacement supports dual N-Channel operation with similar AGC control characteristics. Cross-compatibility claims should be avoided without explicit manufacturer validation.