BG3130RE6327BTSA1

Overview

The BG3130RE6327BTSA1 is a dual N-channel MOSFET tetrode manufactured by Infineon Technologies in an SOT363 package. It integrates two gain-controlled input stages designed for UHF and VHF tuners, such as NTSC and PAL systems. The device features a drain-source voltage of 8 V, continuous drain current of 25 mA, and total power dissipation of 200 mW. Electrical characteristics include a forward transconductance of 33 mS, a noise figure of 1.3 dB at 800 MHz, and a power gain of 24 dB at the same frequency. Integrated gate protection diodes enhance reliability.

Feature Summary

• Dual amplifier architecture providing two AGC amplifiers within a single compact package
• Optimized for high AGC range and low noise figure performance
• Integrated gate protection diodes to safeguard against electrostatic discharge

Applications

• UHF tuner circuits
• VHF tuner circuits
• NTSC television signal processing
• PAL television signal processing

Procurement Notes

Verify the specific ordering suffix RE6327BTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and compliance status. Ensure that the component handling procedures account for its sensitivity to electrostatic discharge during storage and assembly processes.

Selection Notes

Select this component when designing circuits requiring dual independent gain control stages for RF applications. Consider the 8 V maximum drain-source voltage limit and the 200 mW thermal dissipation capability relative to the operating ambient temperature and PCB layout constraints.

Part Context

This part belongs to the BG3130 series of dual N-channel MOSFET tetrodes. The 'R' indicates the specific reel packing configuration, while 'E6327BTSA1' denotes the specific manufacturing lot and environmental compliance details associated with Infineon's standard product line.

Replacement Considerations

No direct public substitutes are listed in the provided datasheet. When evaluating alternatives, verify that replacement components match the SOT363 footprint, provide dual amplifier functionality, and meet the required 8 V breakdown voltage and 33 mS transconductance specifications.