BG5120KH6327XTSA1

BG5120KH6327XTSA1

  • Description:RF MOSFET 5V SOT363
  • Series:-

SKU:406a916f43f3 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 5V SOT363
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:800MHz
  • Gain:23dB
  • Voltage - Test:5 V
  • Current Rating (Amps):20mA
  • Noise Figure:1.1dB
  • Current - Test:10 mA
  • Power - Output:-
  • Voltage - Rated:8 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO
  • Configuration:2 N-Channel (Dual)

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BG5120KH6327XTSA1

Overview

The BG5120KH6327XTSA1 is a dual N-channel MOSFET tetrode in an SOT-363 package. It features two independent amplifiers with integrated gate protection diodes and low noise figure. Key electrical parameters include a drain-source breakdown voltage of 12 V, continuous drain current of 20 mA, and total power dissipation of 200 mW. At 800 MHz, it provides a power gain of 23 dB with a noise figure of 1.1 dB. The device operates within a temperature range of -55 °C to +150 °C.

Feature Summary

  • Dual amplifier configuration in a single compact package
  • Low noise figure suitable for sensitive input stages
  • Integrated gate protection diodes for enhanced reliability
  • High AGC-range with improved cross-modulation performance

Applications

  • Low noise gain controlled input stages for UHF tuners
  • Low noise gain controlled input stages for VHF tuners
  • NTSC tuner applications
  • PAL tuner applications

Procurement Notes

Verify the component against official Infineon datasheets to confirm pinout compatibility and electrical specifications. Ensure that the ordering suffix matches the required tape and reel packaging format. Cross-reference the AEC-Q101 qualification status if automotive grade compliance is necessary for the specific design implementation.

Selection Notes

Select this component when designing circuits requiring dual low-noise amplification in a minimal footprint. Consider the 20 mA continuous drain current limit and 200 mW power dissipation constraints during thermal management planning. Verify that the operating frequency aligns with the specified power gain and noise figure characteristics at 45 MHz or 800 MHz.

Part Context

This part belongs to the BG5120K series of dual N-channel MOSFET tetrodes manufactured by Infineon Technologies. It is designed specifically for tuner applications requiring high linearity and low noise. The SOT-363 package allows for space-efficient PCB layouts while maintaining robust electrical performance for RF signal processing.

Replacement Considerations

No official substitutes are listed in the documentation. When evaluating alternatives, ensure the replacement supports dual N-channel operation, similar SOT-363 packaging, and comparable noise figure and gain characteristics at target frequencies.

BG5120KH6327XTSA1BG5120KH6327XTSA1

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