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The BG5120KH6327XTSA1 is a dual N-channel MOSFET tetrode in an SOT-363 package. It features two independent amplifiers with integrated gate protection diodes and low noise figure. Key electrical parameters include a drain-source breakdown voltage of 12 V, continuous drain current of 20 mA, and total power dissipation of 200 mW. At 800 MHz, it provides a power gain of 23 dB with a noise figure of 1.1 dB. The device operates within a temperature range of -55 °C to +150 °C.
Verify the component against official Infineon datasheets to confirm pinout compatibility and electrical specifications. Ensure that the ordering suffix matches the required tape and reel packaging format. Cross-reference the AEC-Q101 qualification status if automotive grade compliance is necessary for the specific design implementation.
Select this component when designing circuits requiring dual low-noise amplification in a minimal footprint. Consider the 20 mA continuous drain current limit and 200 mW power dissipation constraints during thermal management planning. Verify that the operating frequency aligns with the specified power gain and noise figure characteristics at 45 MHz or 800 MHz.
This part belongs to the BG5120K series of dual N-channel MOSFET tetrodes manufactured by Infineon Technologies. It is designed specifically for tuner applications requiring high linearity and low noise. The SOT-363 package allows for space-efficient PCB layouts while maintaining robust electrical performance for RF signal processing.
No official substitutes are listed in the documentation. When evaluating alternatives, ensure the replacement supports dual N-channel operation, similar SOT-363 packaging, and comparable noise figure and gain characteristics at target frequencies.