BG5412KH6327XTSA1

Overview

The BG5412KH6327XTSA1 is a dual N-channel MOSFET tetrode in an SOT-363 package, designed for the input stages of 2-band tuners. It integrates two AGC amplifiers with an on-chip internal switch controlled by a single line. The device features integrated gate protection diodes and ESD protection. Key electrical parameters include a drain-source voltage (VDS) of 8 V, continuous drain current (ID) of 25 mA per amplifier, and total power dissipation (Ptot) of 200 mW at TS ≤ 94 °C. At TA = 25°C, it exhibits a noise figure as low as 0.8 dB at 45 MHz and 1.1 dB at 800 MHz.

Feature Summary

• Dual amplifier configuration with integrated switching capability
• Ultra-low noise figure optimized for RF applications
• Integrated gate protection and ESD diodes

Applications

• Input stages of 2-band tuners
• Automatic Gain Control (AGC) circuits
• RF signal processing

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the ordering suffix matches the required tape-and-reel packaging specifications. Ensure compliance with AEC-Q101 qualification standards for automotive reliability requirements before finalizing procurement orders.

Selection Notes

Select this component when designing tuner input stages requiring dual amplification within a compact footprint. Consider the 8 V maximum drain-source voltage and 25 mA current limits during circuit design. Evaluate thermal performance against the 200 mW dissipation limit to ensure stable operation under expected load conditions.

Part Context

This part belongs to the BG5412K series of dual N-channel MOSFET tetrodes manufactured by Infineon Technologies. It is specifically engineered for high-performance RF applications where low noise and precise gain control are critical. The SOT-363 package allows for space-efficient integration into modern electronic devices.

Replacement Considerations

No official substitutes are listed in the datasheet. When evaluating alternatives, verify compatibility regarding pin configuration, maximum ratings, and RF performance characteristics such as noise figure and gain control range.