BGR420H6327XTSA1

Overview

The BGR420H6327XTSA1 is a monolithic NPN silicon RF transistor with integrated bias circuitry, manufactured using Infineon's SIEGET technology. It operates within a frequency range up to 1.8 GHz and is housed in an SOT-343 package. Key electrical characteristics include a typical power gain (S21) of 26 dB at 0.4 GHz and 15.5 dB at 1.8 GHz. The device exhibits a noise figure of 1.5 dB at 0.4 GHz and 1.7 dB at 1.8 GHz. At 0.4 GHz, the output third-order intercept point (OIP3) is 21 dBm, with a 1 dB compression point (OP-1dB) of 5.5 dBm. The component requires a VCC of 3.6V and VBB of 2.8V for operation.

Feature Summary

• Integrated on-chip bias circuitry simplifies design by eliminating external biasing components.
• Utilizes SIEGET technology for high-frequency performance and low noise characteristics.
• Designed specifically for low-noise amplifier applications requiring stable gain.

Applications

• Low Noise Amplifiers (LNAs)
• RF front-end modules
• Wireless communication systems

Procurement Notes

Verify the specific ordering suffix H6327XTSA1 against the manufacturer's current documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component status remains active or suitable for your design lifecycle requirements before finalizing procurement plans.

Selection Notes

Select this component when a low-noise, high-gain amplifier with simplified biasing is required. Ensure the operating voltage aligns with the specified 3.6V VCC and 2.8V VBB levels. Consider the SOT-343 package constraints for thermal management and PCB footprint availability during the design phase.

Part Context

This part belongs to the BGR420 series of NPN silicon RF transistors with bias circuitry. It is distinct from similar models like the BGA420, which may use different technologies or lack integrated bias networks. The H6327XTSA1 suffix indicates specific packaging and handling attributes defined by Infineon.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon documentation for potential cross-reference options if this component is obsolete or unavailable.

FAQ

What is the function of Pin 4?

Pin 4 serves as the VBB input, which provides the bias voltage for the integrated circuitry.

Does the device contain any additional internal components?

Yes, there is an additional diode between the emitter and collector due to the design, though it does not affect normal operation in a common emitter configuration.

What is the maximum power dissipation?

The total power dissipation is 120 mW when the case temperature is 115 °C.