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The BLA1011-10 is a silicon N-channel enhancement mode lateral D-MOS transistor designed for avionics applications. It operates in the 1030 to 1090 MHz frequency range with a drain-source voltage of 36 V and delivers 10 W of output power. The device features a power gain exceeding 15 dB and a drain efficiency greater than 40% under pulsed class-AB conditions. Encapsulated in an SOT467C flanged ceramic package, it includes two mounting holes and two leads. Key electrical limits include a maximum drain-source voltage of 75 V, a gate-source voltage limit of ±15 V, and a total power dissipation of 25 W at 25 °C.
Verify the manufacturer origin as Ampleon or Philips Semiconductors based on production date. Confirm the package type matches the SOT467C flanged ceramic specification. Ensure handling procedures account for electrostatic discharge sensitivity. Check for any specific Customer Product/Process Change Notifications if sourcing from older stock.
Select this component for avionics systems requiring operation between 1030 and 1090 MHz. Ensure the thermal management design maintains the junction temperature below 200 °C. Verify that the circuit can handle the specified 75 V breakdown voltage and 2.2 A drain current limits. Consider the common source connection to the flange when designing the grounding scheme.
This LDMOS transistor was originally published by Philips Semiconductors and later transitioned to Ampleon following the spin-off of RF Power from NXP Semiconductors in December 2015. The datasheet status indicates it is a product specification document. The part is specifically engineered for robust performance in critical aviation communication bands.
No public confirmed substitute part numbers are available in the provided documentation.