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The BLA1011-2 is a silicon N-channel enhancement mode LDMOS transistor designed for avionics applications in the 1030 to 1090 MHz frequency range. It is encapsulated in a ceramic surface-mounted SOT538A package with a flangeless design and features a common source connected to the mounting base. The device operates at a drain-source voltage of 36 V, delivering over 2 W of output power with a gain exceeding 16 dB under pulsed class-AB conditions. Key electrical limits include a maximum drain-source voltage of 75 V, a gate-source voltage rating of ±15 V, and a junction temperature limit of 200 °C.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct packaging and handling specifications. Confirm that the component meets RoHS compliance requirements if applicable to your manufacturing process. Ensure proper ESD precautions are maintained during transport and assembly due to the device's sensitivity to electrostatic discharge.
Select this component for avionics systems requiring operation within the 1030 to 1090 MHz band. Ensure the design accommodates the SOT538A package dimensions and thermal resistance characteristics. Verify that the application circuit can provide the necessary biasing for class-AB operation while maintaining the specified load mismatch tolerance.
The BLA1011-2 belongs to Ampleon's family of avionics LDMOS transistors. It shares the SOT538A package form factor with other devices in the series but is specifically optimized for the 1 GHz frequency range. The product line emphasizes ruggedness and high gain for reliable performance in critical communication systems.
Consult the official Ampleon datasheet for confirmed substitute part numbers. No alternative models are explicitly listed as direct replacements in the provided documentation.