BLA1011-300,112

Overview

The BLA1011-300 is a 300 W LDMOS pulsed power transistor designed for avionics applications in the 1030 MHz to 1090 MHz frequency band. It operates with a drain-source voltage of 65 V and a typical supply voltage of 32 V. In class-AB pulsed operation, it delivers 300 W output power with a gain of 16.5 dB and efficiency of 57%. The device features an SOT957A flanged ceramic package with two mounting holes and two leads.

Feature Summary

• Internally matched for ease of use
• Excellent ruggedness capable of withstanding VSWR = 10:1 through all phases
• High efficiency and excellent thermal stability

Applications

• RF power amplifiers for TCAS (Traffic Collision Avoidance System)
• IFF (Identification Friend or Foe) systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package versioning. Confirm RoHS compliance status as per the latest product data sheet revision before procurement. Ensure ESD precautions are strictly followed during handling due to component sensitivity.

Selection Notes

Select this component for avionics designs requiring high power output within the 1030 MHz to 1090 MHz band. Ensure the application circuit supports the required 32 V supply and 150 mA quiescent current. Verify that the PCB layout accommodates the SOT957A flanged package dimensions and mounting hole specifications.

Part Context

This part belongs to Ampleon's Avionics LDMOS transistor series, specifically engineered for critical airborne communication and collision avoidance systems. It utilizes Laterally Diffused Metal Oxide Semiconductor technology optimized for pulsed RF performance in the 1 GHz range.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume cross-compatibility with other LDMOS families without verifying pinout, impedance, and thermal characteristics.