BLA1011S-200,112

Overview

The BLA1011S-200,112 is an avionics LDMOS transistor manufactured by Ampleon USA Inc. It is designed for high-power applications in the 1030 to 1090 MHz frequency range. The device features a single N-channel configuration with enhancement mode operation. Key electrical specifications include a maximum drain current of 2.2 A and a maximum power dissipation of 25 W. It operates at temperatures up to 200 °C. The component utilizes a metal-oxide semiconductor FET technology and includes a source on mounting base to eliminate DC isolators.

Feature Summary

• High power gain capability
• Easy power control functionality
• Excellent ruggedness characteristics
• Source on mounting base eliminates DC isolators

Applications

• Avionics transmitter applications
• 1030 to 1090 MHz frequency range operations

Procurement Notes

Verify the manufacturer designation as Ampleon USA Inc. or Philips Semiconductors/NXP depending on the specific production batch date. Confirm RoHS compliance status via the official datasheet termination options. Ensure the part number suffix matches the required packaging and material specifications for your assembly process.

Selection Notes

Select this component for avionics transmitters requiring robust performance in the 1030-1090 MHz band. Consider the 25 W power dissipation limit and 200 °C maximum operating temperature when designing thermal management solutions. The integrated source on mounting base simplifies circuit design by removing the need for external DC isolators.

Part Context

This LDMOS transistor belongs to the avionics transistor series from Ampleon (formerly NXP). It is engineered specifically for radio frequency power amplification in aircraft communication systems. The technology leverages metal-oxide semiconductor construction to deliver high reliability and power gain in demanding aerospace environments.

Replacement Considerations

Consult official substitution lists for equivalent avionics LDMOS transistors. Verify pinout compatibility and thermal resistance parameters before replacing. Cross-reference with Philips Semiconductors historical data if sourcing legacy components.